Magnetoresistive random access memory
First Claim
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1. A method of forming a magnetoresistive random access memory (MRAM) apparatus, comprising:
- forming a first conductive line on a first insulating layer;
forming a second insulating layer on the first conductive line;
forming a magnetic tunnel junction through the second insulating layer to contact the first conductive line;
forming a cavity adjacent to the magnetic tunnel junction in the second insulating layer; and
forming a second conductive line on the second insulating layer to contact the magnetic tunnel junction.
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Abstract
A method of forming a magnetoresistive random access memory (MRAM) apparatus includes forming a first conductive line on a first insulating layer, forming a second insulating layer on the first conductive line and forming a magnetic tunnel junction through the second insulating layer to contact the first conductive line. The method also includes forming a cavity adjacent to the magnetic tunnel junction in the second insulating layer and forming a second conductive line on the second insulating layer to contact the magnetic tunnel junction.
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Citations
5 Claims
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1. A method of forming a magnetoresistive random access memory (MRAM) apparatus, comprising:
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forming a first conductive line on a first insulating layer; forming a second insulating layer on the first conductive line; forming a magnetic tunnel junction through the second insulating layer to contact the first conductive line; forming a cavity adjacent to the magnetic tunnel junction in the second insulating layer; and forming a second conductive line on the second insulating layer to contact the magnetic tunnel junction. - View Dependent Claims (2, 3, 4, 5)
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Specification