Plasma processing apparatus

• US 8,747,608 B2
• Filed: 12/28/2011
• Issued: 06/10/2014
• Est. Priority Date: 02/27/2006
• Status: Active Grant

• Current Assignee: Hitachi High-Tech Company Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: Usui, Tatehito, Joo, Kazuhiro, Fujii, Takashi
• Primary Examiner(s): Zervigon, Rudy
• Application Number:
  US13/338,722
• Publication Number:
  US 20120101621A1
• Time in Patent Office: 895 Days
• Field of Search: 156/345.24, 156/345.25, 118/712, 118/663, 118/668, 118/688
• US Class Current: 156/345.24
• CPC Class Codes: G01B 11/0625 with measurement of absorption or reflection
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32972 Spectral analysis

Abstract

A plasma processing apparatus includes a detector for detecting interference light of multiple wavelengths from a surface of a sample during processing, a pattern comparator for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, a deviation comparator for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, a recorder for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit.

Claims

1. A plasma processing apparatus for etching a film on a surface of a sample in a vacuum chamber by using plasma generated in the vacuum chamber, comprising:

a detector which detects interference light from the surface of the sample in the vacuum chamber, and

a decision unit which (a) decides a thickness of the film using interference light data obtained from an output of the detector at a plurality of points of time with a predetermined time interval during the etching of the film, which (b) compares interference light data obtained by time differentiating the output from the detector at a given time within the plurality of points of time with a plurality of data patterns corresponding to two or more thicknesses of the film, and which (c) decides that a thickness of the film reaches a thickness corresponding to the data pattern having a minimum difference from the interference light data, the plurality of data patterns corresponding to the interference light data of multiple wavelengths obtained, before the etching of the film, by differentiating the output from the detector in processing of another sample,

wherein when a difference between an output value of the detector indicative of the interference light of one wavelength at the given time point and at a previous point of time just before the given time point within the plurality of points of time is larger than a predetermined value, the interference light data from the output value of the detector at the given time point is corrected by being multiplied by a coefficient indicative of a ratio of an output value of a first detector at the given time point with respect to an output value of the first detector at the previous point of time so as to eliminate the difference between the output value of the detector at the given time point and the previous time point.

2. The plasma processing apparatus according to claim 1, wherein the decision unit decides that the thickness of the film at the given time is a value obtained by interpolation using a value of a thickness of the film at each time within a predetermined time period before the given time.

3. The plasma processing apparatus according to claim 1, wherein the decision unit uses a value interpolated by extrapolation.

4. The plasma processing apparatus according to claim 2, wherein the decision unit uses a value interpolated by extrapolation.

5. A plasma processing apparatus for etching a film on a surface of a sample in a vacuum chamber by using plasma generated in the vacuum chamber, comprising:

a first detector which detects plasma radiation in the vacuum chamber,

a second detector which detects interference light from the surface of the sample in the vacuum chamber, and

a decision unit which (a) decides a thickness of the film using interference light data obtained from an output of the second detector at a plurality of points of time with a predetermined time interval during the etching of the film, which (b) compares interference light data obtained by time differentiating the output from the second detector at a given time within the plurality of points of time with a plurality of data patterns corresponding to two or more thicknesses of the film, and which (c) decides that a thickness of the film reaches a thickness corresponding to the data pattern having a minimum difference from the interference light data, the plurality of data patterns corresponding to the interference light data of multiple wavelengths obtained, before the etching of the film, by differentiating the output from the second detector in processing of another sample with the film of a same construction as the sample,

wherein when a difference of an output value of the first detector indicative of the plasma radiation in the vacuum chamber at the given time point and at a previous point of time just before the given time point within the plurality of points of time is larger than a predetermined value, the output value of the second detector at the given time point is corrected by being multiplied by a coefficient indicative of a ratio of the output value of the first detector at the given time point with respect to the output value of the first detector at the previous point of time so as to eliminate the difference between the output value of the second detector at the given time point and the previous time point.

6. A plasma processing apparatus according to claim 5, wherein when a difference of an output value of the first detector indicative of the interference light of the one wavelength at the given time and an output value of the first detector indicative of the interference light of the one wavelength at a previous time is larger than a predetermined value, the output value of at least one of the first detector and the second detector is multiplied by a coefficient so as to substantially eliminate the difference therebetween.

7. A plasma processing apparatus according to claim 6, wherein the difference is substantially eliminated by using a ratio of the output value of the second detector at the given time with respect to the output value of the second detector at the previous time.