Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode layer including a flat surface over a surface of a base;
forming a gate insulating layer over the gate electrode layer;
forming a first oxide semiconductor layer over the gate insulating layer;
causing crystal growth which proceeds from an upper surface toward an inside of the first oxide semiconductor layer by first heat treatment to form a first non-single crystalline layer;
forming a second oxide semiconductor layer over the first non-single crystalline layer;
causing crystal growth which proceeds from the first non-single crystalline layer toward an upper surface of the second oxide semiconductor layer over the first non-single crystalline layer by second heat treatment to form a second non-single crystalline layer; and
forming a source electrode layer and a drain electrode layer over a stack of the first non-single crystalline layer and the second non-single crystalline layer,wherein a bottom interface whose crystal is aligned of the first non-single crystalline layer is provided to be spaced from a surface of the gate insulating layer.
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Abstract
One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming an oxide component over a base component; forming a first oxide crystal component which grows from a surface toward an inside of the oxide component by heat treatment, and leaving an amorphous component just above a surface of the base component; and stacking a second oxide crystal component over the first oxide crystal component. In particular, the first oxide crystal component and the second oxide crystal component have common c-axes. Same-axis (axial) growth in the case of homo-crystal growth or hetero-crystal growth is caused.
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Citations
11 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer including a flat surface over a surface of a base; forming a gate insulating layer over the gate electrode layer; forming a first oxide semiconductor layer over the gate insulating layer; causing crystal growth which proceeds from an upper surface toward an inside of the first oxide semiconductor layer by first heat treatment to form a first non-single crystalline layer; forming a second oxide semiconductor layer over the first non-single crystalline layer; causing crystal growth which proceeds from the first non-single crystalline layer toward an upper surface of the second oxide semiconductor layer over the first non-single crystalline layer by second heat treatment to form a second non-single crystalline layer; and forming a source electrode layer and a drain electrode layer over a stack of the first non-single crystalline layer and the second non-single crystalline layer, wherein a bottom interface whose crystal is aligned of the first non-single crystalline layer is provided to be spaced from a surface of the gate insulating layer. - View Dependent Claims (2, 3, 4, 11)
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5. A semiconductor device comprising:
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a gate electrode layer including a flat surface over a surface of a base; a gate insulating layer over the gate electrode layer; a metal oxide layer including an amorphous region over the gate insulating layer; a first non-single crystalline layer which is c-axis-aligned perpendicularly to a surface, over the metal oxide layer including the amorphous region; a second non-single crystalline layer which is on and in contact with the first non-single crystalline layer and c-axis-aligned perpendicularly to the surface thereof; and a source electrode and a drain electrode over a stack of the first non-single crystalline layer and the second non-single crystalline layer, wherein the first non-single crystalline layer and the second non-single crystalline layer are metal oxide layers. - View Dependent Claims (6, 7, 8, 9, 10)
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Specification