Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming an oxide semiconductor film over the gate insulating film by a sputtering method using an oxide semiconductor target in a chamber;
forming a source electrode and a drain electrode over the oxide semiconductor film;
forming a silicon oxide film over the source electrode and the drain electrode while the substrate is heated at 200°
C. to 400°
C.; and
forming a silicon nitride film over the silicon oxide film while the substrate is heated at 200°
C. to 400°
C.,wherein a filling rate of the oxide semiconductor target is greater than or equal to 90%,wherein the chamber is evacuated with use of a cryopump, andwherein, when the oxide semiconductor film is formed, a sputtering gas from which hydrogen and moisture are removed is introduced into the chamber.
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Abstract
An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.
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Citations
14 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film by a sputtering method using an oxide semiconductor target in a chamber; forming a source electrode and a drain electrode over the oxide semiconductor film; forming a silicon oxide film over the source electrode and the drain electrode while the substrate is heated at 200°
C. to 400°
C.; andforming a silicon nitride film over the silicon oxide film while the substrate is heated at 200°
C. to 400°
C.,wherein a filling rate of the oxide semiconductor target is greater than or equal to 90%, wherein the chamber is evacuated with use of a cryopump, and wherein, when the oxide semiconductor film is formed, a sputtering gas from which hydrogen and moisture are removed is introduced into the chamber. - View Dependent Claims (2, 3, 8)
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4. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film by a sputtering method using an oxide semiconductor target in a chamber; forming a source electrode and a drain electrode over the oxide semiconductor film; forming a silicon oxide film over the source electrode and the drain electrode while the substrate is heated at 200°
C. to 400°
C.; andforming a silicon nitride film over the silicon oxide film while the substrate is heated at 200°
C. to 400°
C.,wherein a filling rate of the oxide semiconductor target is greater than or equal to 90%, wherein the chamber is evacuated with use of a turbo molecular pump with a cold trap, and wherein, when the oxide semiconductor film is formed, a sputtering gas from which hydrogen and moisture are removed is introduced into the chamber. - View Dependent Claims (9, 11, 12)
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5. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film by a sputtering method using an oxide semiconductor target in a chamber; forming a source electrode and a drain electrode over the oxide semiconductor film; forming a silicon oxide film over the source electrode and the drain electrode while the substrate is heated at 200°
C. to 400°
C.; andforming a silicon nitride film over the silicon oxide film while the substrate is heated at 200°
C. to 400°
C.,wherein a filling rate of the oxide semiconductor target is greater than or equal to 90%, wherein the chamber is evacuated with use of an entrapment vacuum pump, and wherein, when the oxide semiconductor film is formed, a sputtering gas from which hydrogen and moisture are removed is introduced into the chamber. - View Dependent Claims (6, 7, 10, 13, 14)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Sakata, Junichiro, Miyanaga, Akiharu, Sakakura, Masayuki, Koezuka, Junichi, Maruyama, Tetsunori, Imoto, Yuki
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Primary Examiner(s)STARK, JARRETT J
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Application NumberUS12/888,846Publication NumberTime in Patent Office1,356 DaysField of Search438/104, 257/E21.46US Class Current438/104CPC Class CodesC23C 14/086 of zinc, germanium, cadmium...H01L 21/02422 Non-crystalline insulating ...H01L 21/02554 OxidesH01L 21/02565 Oxide semiconducting materi...H01L 21/02631 Physical deposition at redu...H01L 29/66742 Thin film unipolar transistorsH01L 29/7869 having a semiconductor body...
