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Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device

  • US 8,748,223 B2
  • Filed: 09/23/2010
  • Issued: 06/10/2014
  • Est. Priority Date: 09/24/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a gate electrode over a substrate;

    forming a gate insulating film over the gate electrode;

    forming an oxide semiconductor film over the gate insulating film by a sputtering method using an oxide semiconductor target in a chamber;

    forming a source electrode and a drain electrode over the oxide semiconductor film;

    forming a silicon oxide film over the source electrode and the drain electrode while the substrate is heated at 200°

    C. to 400°

    C.; and

    forming a silicon nitride film over the silicon oxide film while the substrate is heated at 200°

    C. to 400°

    C.,wherein a filling rate of the oxide semiconductor target is greater than or equal to 90%,wherein the chamber is evacuated with use of a cryopump, andwherein, when the oxide semiconductor film is formed, a sputtering gas from which hydrogen and moisture are removed is introduced into the chamber.

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