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Method for manufacturing semiconductor device

  • US 8,748,240 B2
  • Filed: 12/13/2012
  • Issued: 06/10/2014
  • Est. Priority Date: 12/22/2011
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming a first insulating film;

    performing a first oxygen addition on the first insulating film under a first condition;

    performing a second oxygen addition on the first insulating film subjected to the first oxygen addition, under a second condition; and

    forming an oxide semiconductor film over the first insulating film subjected to the second oxygen addition,wherein the first condition and the second condition are different from each other.

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