Method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a first insulating film;
performing a first oxygen addition on the first insulating film under a first condition;
performing a second oxygen addition on the first insulating film subjected to the first oxygen addition, under a second condition; and
forming an oxide semiconductor film over the first insulating film subjected to the second oxygen addition,wherein the first condition and the second condition are different from each other.
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Accused Products
Abstract
Oxygen vacancies in an oxide semiconductor film and the vicinity of the oxide semiconductor film are reduced and electric characteristics of a transistor including the oxide semiconductor film are improved. Further, a highly reliable semiconductor device including the transistor including the oxide semiconductor film is provided. In the transistor including the oxide semiconductor film, at least one insulating film in contact with the oxide semiconductor film contains excess oxygen. By the excess oxygen included in the insulating film in contact with the oxide semiconductor film, oxygen vacancies in the oxide semiconductor film and the vicinity of the oxide semiconductor film can be reduced. Note that the insulating film including the excess oxygen has a profile of the excess oxygen concentration having two or more local maximum values in the depth direction.
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Citations
14 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming a first insulating film; performing a first oxygen addition on the first insulating film under a first condition; performing a second oxygen addition on the first insulating film subjected to the first oxygen addition, under a second condition; and forming an oxide semiconductor film over the first insulating film subjected to the second oxygen addition, wherein the first condition and the second condition are different from each other. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode; forming a gate insulating film over the gate electrode; performing a first oxygen addition on the gate insulating film under a first condition; performing a second oxygen addition on the gate insulating film subjected to the first oxygen addition, under a second condition; and forming an oxide semiconductor film overlapping with the gate electrode with the gate insulating film interposed therebetween after the second oxygen addition is performed, wherein the first condition and the second condition are different from each other. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification