Semiconductor device and method for manufacturing the same
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor film over an insulating surface;
forming a gate insulating film covering the oxide semiconductor film;
forming a first conductive film provided over the gate insulating film and overlapping with the oxide semiconductor film;
forming a film over the first conductive film;
forming a first resist by performing electron beam exposure over the film;
selectively etching the film using the first resist as a mask to form a hard mask film;
forming a gate electrode by selectively etching the first conductive film using the hard mask film as a mask;
forming a first insulating film over the gate insulating film and the gate electrode;
performing first removing treatment on a part of the first insulating film while the gate electrode is not exposed;
forming an anti-reflective film over the first insulating film subjected to the first removing treatment;
forming a second resist by performing electron beam exposure over the anti-reflective film and overlapping with the oxide semiconductor film;
exposing parts of the insulating surface and the oxide semiconductor film to form an exposed insulating surface and oxide semiconductor film by selectively etching the anti-reflective film, the first insulating film, and the gate insulating film;
forming a second conductive film over the exposed insulating surface and oxide semiconductor film, and the anti-reflective film;
forming a second insulating film over the second conductive film;
performing second removing treatment on parts of the second insulating film and the second conductive film, and the anti-reflective film so that the first insulating film is exposed; and
forming a source electrode and a drain electrode by processing the second conductive film subjected to the second removing treatment.
1 Assignment
0 Petitions
Accused Products
Abstract
A first conductive film overlapping with an oxide semiconductor film is formed over a gate insulating film, a gate electrode is formed by selectively etching the first conductive film using a resist subjected to electron beam exposure, a first insulating film is formed over the gate insulating film and the gate electrode, removing a part of the first insulating film while the gate electrode is not exposed, an anti-reflective film is formed over the first insulating film, the anti-reflective film, the first insulating film and the gate insulating film are selectively etched using a resist subjected to electron beam exposure, and a source electrode in contact with one end of the oxide semiconductor film and one end of the first insulating film and a drain electrode in contact with the other end of the oxide semiconductor film and the other end of the first insulating film are formed.
161 Citations
19 Claims
-
1. A method for manufacturing a semiconductor device, comprising the steps of:
-
forming an oxide semiconductor film over an insulating surface; forming a gate insulating film covering the oxide semiconductor film; forming a first conductive film provided over the gate insulating film and overlapping with the oxide semiconductor film; forming a film over the first conductive film; forming a first resist by performing electron beam exposure over the film; selectively etching the film using the first resist as a mask to form a hard mask film; forming a gate electrode by selectively etching the first conductive film using the hard mask film as a mask; forming a first insulating film over the gate insulating film and the gate electrode; performing first removing treatment on a part of the first insulating film while the gate electrode is not exposed; forming an anti-reflective film over the first insulating film subjected to the first removing treatment; forming a second resist by performing electron beam exposure over the anti-reflective film and overlapping with the oxide semiconductor film; exposing parts of the insulating surface and the oxide semiconductor film to form an exposed insulating surface and oxide semiconductor film by selectively etching the anti-reflective film, the first insulating film, and the gate insulating film; forming a second conductive film over the exposed insulating surface and oxide semiconductor film, and the anti-reflective film; forming a second insulating film over the second conductive film; performing second removing treatment on parts of the second insulating film and the second conductive film, and the anti-reflective film so that the first insulating film is exposed; and forming a source electrode and a drain electrode by processing the second conductive film subjected to the second removing treatment. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A method for manufacturing a semiconductor device, comprising the steps of:
-
forming an oxide semiconductor film over an insulating surface; forming a gate insulating film covering the oxide semiconductor film; forming a first conductive film provided over the gate insulating film and overlapping with the oxide semiconductor film; forming a film over the first conductive film; forming a first resist by performing electron beam exposure over the film; selectively etching the film using the first resist as a mask to form a hard mask film; forming a gate electrode by selectively etching the first conductive film using the hard mask film as a mask; forming, in a self-aligned manner, a channel formation region in a region overlapping with the gate electrode in the oxide semiconductor film and a first low-resistance region and a second low-resistance region between which the channel formation region is sandwiched in the oxide semiconductor film by adding impurities; forming a first insulating film over the gate insulating film and the gate electrode; performing first removing treatment on a part of the first insulating film while the gate electrode is not exposed; forming an anti-reflective film over the first insulating film on which the first removing treatment is performed; forming a second resist by performing electron beam exposure over the anti-reflective film and overlapping with the channel formation region, the first low-resistance region, and the second low-resistance region; exposing a part of the insulating surface, the first low-resistance region, and the second low-resistance region by selectively etching the anti-reflective film, the first insulating film, and the gate insulating film to form an exposed insulating surface, first low-resistance region, and second low-resistance region; forming a second conductive film over the exposed insulating surface, first low-resistance region, and second low-resistance region, and the anti-reflective film; forming a second insulating film over the second conductive film; performing second removing treatment on parts of the second insulating film and the second conductive film, and the anti-reflective film so that the first insulating film is exposed; and forming a source electrode and a drain electrode by processing the second conductive film on which the second removing treatment is performed. - View Dependent Claims (8, 9, 10, 11, 12)
-
-
13. A method for manufacturing a semiconductor device, comprising the steps of:
-
forming an oxide semiconductor film over an insulating surface; forming a gate insulating film covering the oxide semiconductor film; forming a first conductive film provided over the gate insulating film and overlapping with the oxide semiconductor film; forming a film over the first conductive film; forming a first resist by performing electron beam exposure over the film; selectively etching the film using the first resist as a mask to form a hard mask film; forming a gate electrode by selectively etching the first conductive film using the hard mask film as a mask; forming a first insulating film over the gate insulating film and the gate electrode; performing first removing treatment on a part of the first insulating film while the gate electrode is not exposed; forming an anti-reflective film over the first insulating film subjected to the first removing treatment; forming a second resist by performing electron beam exposure over the anti-reflective film and overlapping with the oxide semiconductor film; exposing parts of the insulating surface and the oxide semiconductor film to form an exposed insulating surface and oxide semiconductor film by selectively etching the anti-reflective film, the first insulating film, and the gate insulating film; forming a second conductive film over the exposed insulating surface and oxide semiconductor film, and the anti-reflective film; forming a second insulating film over the second conductive film; and performing second removing treatment on parts of the second insulating film and the second conductive film, and the anti-reflective film so that the first insulating film is exposed. - View Dependent Claims (14, 15, 16, 17, 18, 19)
-
Specification