Microelectronic devices and methods for filing vias in microelectronic devices

• US 8,748,311 B2
• Filed: 12/27/2011
• Issued: 06/10/2014
• Est. Priority Date: 12/10/2003
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Hiatt, William M., Kirby, Kyle K.
• Primary Examiner(s): Matthews, Colleen
• Assistant Examiner(s): Bell, Lauren R
• Application Number:
  US13/337,943
• Publication Number:
  US 20120094482A1
• Time in Patent Office: 896 Days
• Field of Search: 438/667, 257/E21.597, 257/774
• US Class Current: 438/667
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2224/73207 Bump and wire connectors
• CPC Class Codes: H01L 2224/73257 Bump and wire connectors
• CPC Class Codes: H01L 2225/06506 Wire or wire-like electrical connections between devices
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

Microelectronic devices and methods for filling vias and forming conductive interconnects in microfeature workpieces and dies are disclosed herein. In one embodiment, a method includes providing a microfeature workpiece having a plurality of dies and at least one passage extending through the microfeature workpiece from a first side of the microfeature workpiece to an opposite second side of the microfeature workpiece. The method can further include forming a conductive plug in the passage adjacent to the first side of the microelectronic workpiece, and depositing conductive material in the passage to at least generally fill the passage from the conductive plug to the second side of the microelectronic workpiece.

Claims

1. A method of forming a conductive interconnect in a microelectronic device, the method comprising:

providing a microfeature workpiece having a plurality of dies and at least one passage of the microfeature workpiece extending through the microfeature workpiece from a first side to an opposing second side of the microfeature workpiece, the passage defining a first opening in the first side of the microfeature workpiece and a second opening in the second side of the microfeature workpiece;

applying a sealing layer to the first side of the microfeature workpiece to at least generally seal the first opening of the passage;

depositing a portion of conductive material through the second opening of the passage to at least partially fill the passage; and

removing at least a portion of the sealing layer from the first side of the microfeature workpiece to expose the conductive material in the passage.

2. The method of claim 1 wherein depositing a portion of conductive material through the second opening of the passage includes forming a plug in the passage adjacent to the sealing layer.

3. The method of claim 1 wherein depositing a portion of conductive material through the second opening of the passage includes depositing a first portion of conductive material to form a conductive plug in the passage adjacent to the sealing layer, and further comprising depositing a second portion of conductive material through the second opening of the passage, the second portion of conductive material at least generally filling the passage from the conductive plug to the second side of the microelectronic workpiece.

4. The method of claim 1 wherein depositing a portion of conductive material through the second opening of the passage includes depositing a first portion of conductive material to form a conductive plug in the passage adjacent to the sealing layer, and further comprising:

biasing the plug at an electrical potential; and

depositing a second portion of conductive material through the second opening of the passage, the second portion of conductive material at least generally filling the passage from the conductive plug to the second side of the microelectronic workpiece.

5. The method of claim 1 wherein depositing a portion of conductive material through the second opening of the passage includes depositing a first portion of conductive material to form a conductive plug in the passage adjacent to the sealing layer, and further comprising:

positioning a conductive element adjacent to the first side of the microelectronic workpiece in electrical contact with the plug;

biasing the plug at an electrical potential with the conductive element; and

depositing a second portion of conductive material through the second opening of the passage, the second portion of conductive material at least generally filling the passage from the conductive plug to the second side of the microelectronic workpiece.

6. The method of claim 1 wherein depositing a portion of conductive material through the second opening of the passage includes depositing a first portion of conductive material to form a conductive plug in the passage adjacent to the sealing layer, and further comprising:

depositing a second portion of conductive material through the second opening of the passage, the second portion of conductive material at least generally filling the passage from the conductive plug to the second side of the microelectronic workpiece; and

forming a bond-pad electrically coupled to the conductive plug.

7. A method of forming a conductive interconnect in a microelectronic device, the method comprising:

providing a microfeature workpiece having a plurality of dies and at least one passage of the microfeature workpiece extending through the microfeature workpiece from a first side to an opposing second side of the microfeature workpiece, the passage defining a first opening in the first side of the microfeature workpiece and a second opening in the second side of the microfeature workpiece;

applying a sealing layer to the first side of the microfeature workpiece to at least generally seal the first opening of the passage;

depositing a first portion of conductive material through the second opening of the passage to at least partially fill the passage and form a conductive plug in the passage adjacent to the sealing layer;

removing the sealing layer from the first side of the microfeature workpiece; and

depositing a second portion of conductive material through the second opening of the passage, the second portion of conductive material at least generally filling the passage from the conductive plug to the second side of the microelectronic workpiece.

8. A method of forming a conductive interconnect in a microelectronic device, the method comprising:

providing a microfeature workpiece having a plurality of dies and at least one passage of the microfeature workpiece extending through the microfeature workpiece from a first side to an opposing second side of the microfeature workpiece, the passage defining a first opening in the first side of the microfeature workpiece and a second opening in the second side of the microfeature workpiece;

applying a sealing layer to the first side of the microfeature workpiece to at least generally seal the first opening of the passage;

depositing a first portion of conductive material through the second opening of the passage to at least partially fill the passage and form a conductive plug in the passage adjacent to the sealing layer;

removing the sealing layer from the first side of the microfeature workpiece;

biasing the plug at an electrical potential; and

electroplating a second portion of conductive material through the second opening of the passage, the second portion of conductive material at least generally filling the passage from the conductive plug to the second side of the microelectronic workpiece.

9. A method of forming a conductive interconnect in a microelectronic device, the method comprising:

providing a microfeature workpiece having a plurality of dies and at least one passage of the microfeature workpiece extending through the microfeature workpiece from a first side to an opposing second side of the microfeature workpiece, the passage defining a first opening in the first side of the microfeature workpiece and a second opening in the second side of the microfeature workpiece;

applying a sealing layer to the first side of the microfeature workpiece to at least generally seal the first opening of the passage;

depositing a first portion of conductive material through the second opening of the passage to at least partially fill the passage and form a conductive plug in the passage adjacent to the sealing layer;

removing the sealing layer from the first side of the microfeature workpiece;

depositing a conductive layer on the first side of the microfeature workpiece in contact with the plug in the passage;

electrically biasing the conductive layer; and

depositing a second portion of conductive material through the second opening of the passage, the second portion of conductive material at least generally filling the passage from the conductive plug to the second side of the microelectronic workpiece.

10. The method of claim 9 wherein depositing a second portion of conductive material through the second opening includes electroplating a second portion of conductive material through the second opening.

11. A method of forming a conductive interconnect in a microelectronic device, the method comprising:

providing a microfeature workpiece having a plurality of dies and at least one passage, the passage extending through the microfeature workpiece from a first side to an opposing second side, the passage defining a first opening in the first side of the microfeature workpiece and a second opening in the second side of the microfeature workpiece;

positioning a conductive contact surface in contact with the first side of the microfeature workpiece, the conductive contact surface at least generally covering the first opening of the passage;

biasing the conductive contact surface at an electrical potential; and

depositing conductive material through the second opening of the passage to at least partially fill the passage from the electrically-biased conductive contact surface toward the second side of the microfeature workpiece.

12. The method of claim 11 wherein depositing conductive material through the second opening of the passage includes at least generally filling the passage with the conductive material from the conductive contact surface to the second side of the microelectronic workpiece.

13. The method of claim 11 wherein depositing conductive material through the second opening of the passage includes forming a plug in the passage in contact with the conductive contact surface.

14. The method of claim 11 wherein depositing conductive material through the second opening of the passage includes electroplating conductive material through the second opening of the passage.