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Semiconductor device with oxide semiconductor

  • US 8,748,880 B2
  • Filed: 11/19/2010
  • Issued: 06/10/2014
  • Est. Priority Date: 11/20/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first electrode over a substrate;

    an oxide semiconductor film over and in electrical contact with the first electrode, the oxide semiconductor film having a thickness of greater than 3 μ

    m;

    a second electrode over and in electrical contact with the oxide semiconductor film;

    a gate insulating film over the second electrode, the gate insulating film being in contact with an end portion of a top surface and a side surface of the oxide semiconductor film; and

    a third electrode over the gate insulating film, the third electrode having an opening overlapping the second electrode,wherein the third electrode faces a side surface of the oxide semiconductor film and the end portion of the top surface of the oxide semiconductor film with the gate insulating film provided between the third electrode and the oxide semiconductor film.

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