Semiconductor device with oxide semiconductor

• US 8,748,880 B2
• Filed: 11/19/2010
• Issued: 06/10/2014
• Est. Priority Date: 11/20/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Kawae, Daisuke
• Primary Examiner(s): ARORA, AJAY
• Application Number:
  US12/949,949
• Publication Number:
  US 20110121288A1
• Time in Patent Office: 1,299 Days
• Field of Search: 257/43
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/42392 fully surrounding the channel, e.g. gate-all-around
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78642 Vertical transistors
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that can serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 μm, preferably greater than 3 μm, more preferably greater than or equal to 10 μm, and end portions of one of electrodes that are in contact with the oxide semiconductor is placed inside end portions of the oxide semiconductor.

Claims

1. A semiconductor device comprising:

a first electrode over a substrate;

an oxide semiconductor film over and in electrical contact with the first electrode, the oxide semiconductor film having a thickness of greater than 3 μ

m;

a second electrode over and in electrical contact with the oxide semiconductor film;

a gate insulating film over the second electrode, the gate insulating film being in contact with an end portion of a top surface and a side surface of the oxide semiconductor film; and

a third electrode over the gate insulating film, the third electrode having an opening overlapping the second electrode,

wherein the third electrode faces a side surface of the oxide semiconductor film and the end portion of the top surface of the oxide semiconductor film with the gate insulating film provided between the third electrode and the oxide semiconductor film.

2. The semiconductor device according to claim 1,

wherein the oxide semiconductor film comprises a crystal region, and

wherein the crystal region is in contact with the gate insulating film.

3. The semiconductor device according to claim 1,

wherein the oxide semiconductor film comprises a crystal region, and

wherein the crystal region is in contact with the gate insulating film and the second electrode.

4. The semiconductor device according to claim 1,

wherein the first electrode is one of a source electrode and a drain electrode,

wherein the second electrode is the other of the source electrode and the drain electrode, and

wherein the third electrode is a gate electrode.

5. The semiconductor device according to claim 1, wherein the oxide semiconductor film has a carrier density of lower than 1×

10¹⁴ cm<sup>−

3</sup>.

6. The semiconductor device according to claim 1, wherein the oxide semiconductor film has a carrier density of lower than 1×

10¹² cm<sup>−

3</sup>.

7. The semiconductor device according to claim 1, wherein the oxide semiconductor film has a hydrogen concentration of lower than 1×

10¹⁶ cm<sup>−

3</sup>.

8. The semiconductor device according to claim 1, wherein a channel is formed in an entire region of the oxide semiconductor film.

9. The semiconductor device according to claim 1, wherein the third electrode has a ring shape.

28. The semiconductor device according to claim 1, wherein each of the first electrode and the second electrode comprises a metal element selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, tungsten and yttrium, or an alloy comprising any of the metal element selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, tungsten and yttrium, or one or more metal elements selected from manganese, magnesium, zirconium and beryllium.

10. A semiconductor device comprising:

a first electrode over a substrate;

an oxide semiconductor film over and in electrical contact with the first electrode, the oxide semiconductor film having a thickness of greater than 3 μ

m;

a second electrode over and in electrical contact with the oxide semiconductor film;

a gate insulating film over the second electrode, the gate insulating film being in contact with an end portion of a top surface and a side surface of the oxide semiconductor film; and

a third electrode over the gate insulating film, the third electrode having an opening overlapping the second electrode,

wherein a third electrode faces a side surface of the oxide semiconductor film and the end portion of the top surface of the oxide semiconductor film with the gate insulating film provided between the third electrode and the oxide semiconductor film,

wherein a length of a top surface of the first electrode is longer than a length of a bottom surface of the oxide semiconductor film, and

wherein a length of a top surface of the oxide semiconductor is longer than a length of a bottom surface of the second electrode.

11. The semiconductor device according to claim 10,

wherein the oxide semiconductor film comprises a crystal region, and

wherein the crystal region is in contact with the gate insulating film.

12. The semiconductor device according to claim 10,

wherein the oxide semiconductor film comprises a crystal region, and

wherein the crystal region is in contact with the gate insulating film and the second electrode.

13. The semiconductor device according to claim 10,

wherein the first electrode is one of a source electrode and a drain electrode,

wherein the second electrode is the other of the source electrode and the drain electrode, and

wherein the third electrode is a gate electrode.

14. The semiconductor device according to claim 10, wherein the oxide semiconductor film has a carrier density of lower than 1×

10¹⁴ cm<sup>−

3</sup>.

15. The semiconductor device according to claim 10, wherein the oxide semiconductor film has a carrier density of lower than 1×

10¹² cm<sup>−

3</sup>.

16. The semiconductor device according to claim 10, wherein the oxide semiconductor film has a hydrogen concentration of lower than 1×

10¹⁶ cm<sup>−

3</sup>.

17. The semiconductor device according to claim 10, wherein a channel is formed in an entire region of the oxide semiconductor film.

18. The semiconductor device according to claim 10, wherein the third electrode has a ring shape.

19. A semiconductor device comprising:

a first electrode over a substrate;

an oxide semiconductor film over and in electrical contact with the first electrode, the oxide semiconductor film having a thickness of greater than 3 μ

m;

a second electrode over and in electrical contact with the oxide semiconductor film;

a gate insulating film having a first opening over the second electrode, the gate insulating film being in contact with an end portion of a top surface and a side surface of the oxide semiconductor film;

a third electrode over the gate insulating film, the third electrode having a second opening overlapping the second electrode,

wherein the third electrode faces a side surface of the oxide semiconductor film and the end portion of the top surface of the oxide semiconductor film with the gate insulating film provided between the third electrode and the oxide semiconductor film;

an interlayer insulating film over the third electrode, the interlayer insulating film having a third opening; and

a wiring over the interlayer insulating film, the wiring being electrically connected to the second electrode through the first opening, the second opening and the third opening.

20. The semiconductor device according to claim 19,

wherein the oxide semiconductor film comprises a crystal region, and

wherein the crystal region is in contact with the gate insulating film.

21. The semiconductor device according to claim 19,

wherein the oxide semiconductor film comprises a crystal region, and

wherein the crystal region is in contact with the gate insulating film and the second electrode.

22. The semiconductor device according to claim 19,

wherein the first electrode is one of a source electrode and a drain electrode,

wherein the second electrode is the other of the source electrode and the drain electrode, and

wherein the third electrode is a gate electrode.

23. The semiconductor device according to claim 19, wherein the oxide semiconductor film has a carrier density of lower than 1×

10¹⁴ cm<sup>−

3</sup>.

24. The semiconductor device according to claim 19, wherein the oxide semiconductor film has a carrier density of lower than 1×

10¹² cm<sup>−

3</sup>.

25. The semiconductor device according to claim 19, wherein the oxide semiconductor film has a hydrogen concentration of lower than 1×

10¹⁶ cm<sup>−

3</sup>.

26. The semiconductor device according to claim 19, wherein a channel is formed in an entire region of the oxide semiconductor film.

27. The semiconductor device according to claim 19, wherein the third electrode has a ring shape.