Display device

• US 8,748,895 B2
• Filed: 06/20/2013
• Issued: 06/10/2014
• Est. Priority Date: 05/13/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Murakami, Satoshi, Osame, Mitsuaki
• Primary Examiner(s): Huynh, Andy
• Application Number:
  US13/922,920
• Publication Number:
  US 20130277709A1
• Time in Patent Office: 355 Days
• Field of Search: 257/59, 257/72, 257/E21.033, 257/E21.413, 257/E21.414, 257/E29.117
• US Class Current: 257/59
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/4958 with a multiple layer structure
• CPC Class Codes: H01L 29/4966 the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/856 comprising reflective means
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/121 characterised by the geometry or disposition of pixel elements
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements

Abstract

Disclosed is a display device and an electronic apparatus incorporating the display device. The display device includes a transistor and a planarization film over the transistor. The planarization film has an opening where an edge portion is rounded. The display device further includes a first electrode over the planarization film and an organic resin film over the first electrode. The organic resin film also has an opening where an edge portion is rounded. The organic resin film is located in the opening of the planarization film. The first electrode and the transistor are electrically connected to each other through a conductive film. The first electrode is in contact with a top surface of the conductive film. Over the first electrode, a light-emitting member and a second electrode are provided.

Claims

1. A display device comprising:

a transistor comprising a gate, a source, and a drain;

a first insulating film over the transistor;

a wiring over the first insulating film and electrically connected to one of the source and the drain of the transistor;

a second insulating film over the wiring;

a first conductive film over the second insulating film and electrically connected to the other of the source and the drain of the transistor, wherein the first conductive film has a first region and a second region thinner than the first region;

a third insulating film over the first conductive film;

a light-emitting member over the first electrode conductive film and the third insulating film, wherein the light-emitting member is in contact with the second region of the first conductive film; and

a second conductive film over the light-emitting member.

2. The display device according to claim 1,

wherein the transistor is a thin film transistor;

wherein the first insulating film is a silicon nitride film,

wherein the second insulating film is a planarization film comprising a first opening portion,

wherein the first conductive film is in the first opening portion,

wherein the third insulating film comprises a second opening portion,

wherein a first edge portion of the first opening portion is rounded,

wherein a second edge portion of the second opening portion is rounded,

wherein the third insulating film is in the first opening portion, and

wherein the bottom of the second opening portion does not overlap with a bottom of the first opening portion.

3. The display device according to claim 1, wherein the first conductive film is a titanium nitride film.

4. The display device according to claim 1,

wherein the transistor comprises a semiconductor film, and

wherein the gate is provided over the semiconductor film.

5. The display device according to claim 4, wherein the semiconductor film comprises polycrystalline silicon.

6. The display device according to claim 1, comprising a silicon nitride film between the first conductive film and the transistor.

7. The display device according to claim 1, comprising a third conductive film between the first conductive film and the third insulating film,

wherein the third conductive film comprises an opening, and

wherein the light-emitting member is in contact with a side surface of the third conductive film.

8. The display device according to claim 7, wherein the third conductive film is an aluminum film.

9. The display device according to claim 1, wherein the wiring is a power supply wiring.

10. The display device according to claim 1, wherein the third insulating film is a resin film.

11. The display device according to claim 1, wherein the first conductive film has a light-reflective property.

12. A display device comprising:

a transistor comprising a gate, a source, and a drain;

a first insulating film over the transistor;

a wiring over the first insulating film and electrically connected to one of the source and the drain of the transistor;

a second insulating film over the wiring;

a first conductive film over the second insulating film and electrically connected to the other of the source and the drain of the transistor;

a second conductive film on and in contact with the first conductive film;

a third conductive film on and in contact with the second conductive film, wherein the third conductive film has a first opening;

a third insulating film over the third conductive film, wherein the third insulating film has a second opening;

a light-emitting member over the third insulating film and in contact with the second conductive film and a side surface of the third conductive film; and

a fourth conductive film over the light-emitting member.

13. The display device according to claim 12, wherein the first conductive film is a titanium film.

14. The display device according to claim 12, wherein the second conductive film is a titanium nitride film.

15. The display device according to claim 12, wherein the third conductive film is an aluminum film.

16. The display device according to claim 12,

wherein the transistor comprises a semiconductor film, and

wherein the gate is provided over the semiconductor film.

17. The display device according to claim 16, wherein the semiconductor film comprises polycrystalline silicon.

18. The display device according to claim 12, comprising a silicon nitride film between the first conductive film and the transistor.

19. The display device according to claim 12, wherein the wiring is a power supply wiring.

20. The display device according to claim 12, wherein the third insulating film is a resin film.

21. The display device according to claim 12, wherein the third conductive film has a light-reflective property.