Semiconductor light emitting element and method for manufacturing semiconductor light emitting element
First Claim
1. A semiconductor light emitting element comprising:
- a first semiconductor layer that has a first conductivity type;
a light emitting layer that is laminated on one surface of the first semiconductor layer so that a part of the one surface is exposed;
a second semiconductor layer that has a second conductivity type different from the first conductivity type and is laminated on the light emitting layer;
a transparent electrode that includes oxide of indium, has transparency to light output from the light emitting layer, and is laminated on the second semiconductor layer;
a first joining layer that includes Pt and nitride of at least one kind of metal selected from among Ta, Nb, Ti, W and Mo, and is laminated on the first semiconductor layer;
a first connecting electrode that is laminated on the first joining layer, and is used for electric connection with an outside;
a second joining layer that is composed of the same material as the first joining layer, and is laminated on the transparent electrode; and
a second connecting electrode that is composed of the same material as the first connecting electrode, is laminated on the second joining layer, and is used for electric connection with an outside,whereinthe first connecting electrode includes a first diffusion barrier layer that is composed of Pt, and is laminated on the first joining layer, and a first connecting electrode layer that is composed of Au or an alloy including Au, is laminated on the first diffusion barrier layer, and is used for the electric connection with the outside, andthe second connecting electrode includes a second diffusion barrier layer that is composed of the same Pt as the first diffusion barrier layer, and is laminated on the second joining layer, and a second connecting electrode layer that is composed of the same Au or alloy including Au as the first connecting electrode layer, is laminated on the second diffusion barrier layer, and is used for the electric connection with the outside.
2 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor light emitting element (1) provided with an n-type semiconductor layer (140), a light emitting layer (150), a p-type semiconductor layer (160), a transparent electrode (170), a p-side electrode (300) formed on the transparent electrode, and an n-side electrode (400) formed on the n-type semiconductor layer. The p-side electrode has a p-side joining layer (310) and a p-side bonding pad electrode (320), which are laminated on the transparent electrode, and the n-side electrode has an n-side joining layer (410) and an n-side bonding pad electrode (420), which are laminated on the n-type semiconductor layer. The p-side joining layer and the n-side joining layer are configured of a mixed layer composed of TaN and Pt, and the p-side bonding pad electrode and the n-side bonding pad electrode are configured of a laminated structure composed of Pt and Au.
-
Citations
8 Claims
-
1. A semiconductor light emitting element comprising:
-
a first semiconductor layer that has a first conductivity type; a light emitting layer that is laminated on one surface of the first semiconductor layer so that a part of the one surface is exposed; a second semiconductor layer that has a second conductivity type different from the first conductivity type and is laminated on the light emitting layer; a transparent electrode that includes oxide of indium, has transparency to light output from the light emitting layer, and is laminated on the second semiconductor layer; a first joining layer that includes Pt and nitride of at least one kind of metal selected from among Ta, Nb, Ti, W and Mo, and is laminated on the first semiconductor layer; a first connecting electrode that is laminated on the first joining layer, and is used for electric connection with an outside; a second joining layer that is composed of the same material as the first joining layer, and is laminated on the transparent electrode; and a second connecting electrode that is composed of the same material as the first connecting electrode, is laminated on the second joining layer, and is used for electric connection with an outside, wherein the first connecting electrode includes a first diffusion barrier layer that is composed of Pt, and is laminated on the first joining layer, and a first connecting electrode layer that is composed of Au or an alloy including Au, is laminated on the first diffusion barrier layer, and is used for the electric connection with the outside, and the second connecting electrode includes a second diffusion barrier layer that is composed of the same Pt as the first diffusion barrier layer, and is laminated on the second joining layer, and a second connecting electrode layer that is composed of the same Au or alloy including Au as the first connecting electrode layer, is laminated on the second diffusion barrier layer, and is used for the electric connection with the outside. - View Dependent Claims (2, 3, 4)
-
-
5. A method for manufacturing a semiconductor light emitting element comprising:
-
a process of forming, on a substrate, a first semiconductor layer that has a first conductivity type, a light emitting layer that is laminated on the first semiconductor layer, and a second semiconductor layer that has a second conductivity type opposite to the type of the first semiconductor layer and is laminated on the light emitting layer; a process of forming, on the second semiconductor layer, a transparent electrode that includes oxide of indium and has transparency to light output from the light emitting layer, and exposing the first semiconductor layer on the transparent electrode side; a process of laminating, on an exposed section of the first semiconductor layer, a first joining layer that includes Pt and nitride of at least one kind of metal selected from among Ta, Nb, Ti, W and Mo, and laminating, on the transparent electrode, a second joining layer that is composed of the same material as the first joining layer; and a process of laminating, on the first joining layer, a first connecting electrode that is used for electric connection with an outside, and laminating, on the second joining layer, a second connecting electrode that is composed of the same material as the first connecting electrode, wherein the process of laminating the first connecting electrode and the second connecting electrode comprises; a process of laminating, on the first joining layer, a first diffusion barrier layer that is composed of Pt, and laminating, on the second joining layer, a second diffusion barrier layer that is composed of Pt; and a process of laminating, on the first diffusion barrier layer, a first connecting electrode layer that is composed of Au or an alloy including Au and is used for the electric connection with the outside, and laminating, on the second diffusion barrier layer, a second connecting electrode layer that is composed of Au or an alloy including Au and is used for electric connection with an outside. - View Dependent Claims (6, 7, 8)
-
Specification