Semiconductor light emitting element and method for manufacturing semiconductor light emitting element

• US 8,748,903 B2
• Filed: 10/27/2010
• Issued: 06/10/2014
• Est. Priority Date: 11/05/2009
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Kamei, Koji, Wang, Honglin
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US13/505,973
• Publication Number:
  US 20120217534A1
• Time in Patent Office: 1,322 Days
• Field of Search: 257/13, 257/79, 257/94, 257/E33.062, 257/E33.063, 257/E33.064, 438/22
• US Class Current: 257/79
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/40 Materials therefor

Abstract

A semiconductor light emitting element (1) provided with an n-type semiconductor layer (140), a light emitting layer (150), a p-type semiconductor layer (160), a transparent electrode (170), a p-side electrode (300) formed on the transparent electrode, and an n-side electrode (400) formed on the n-type semiconductor layer. The p-side electrode has a p-side joining layer (310) and a p-side bonding pad electrode (320), which are laminated on the transparent electrode, and the n-side electrode has an n-side joining layer (410) and an n-side bonding pad electrode (420), which are laminated on the n-type semiconductor layer. The p-side joining layer and the n-side joining layer are configured of a mixed layer composed of TaN and Pt, and the p-side bonding pad electrode and the n-side bonding pad electrode are configured of a laminated structure composed of Pt and Au.

Claims

1. A semiconductor light emitting element comprising:

a first semiconductor layer that has a first conductivity type;

a light emitting layer that is laminated on one surface of the first semiconductor layer so that a part of the one surface is exposed;

a second semiconductor layer that has a second conductivity type different from the first conductivity type and is laminated on the light emitting layer;

a transparent electrode that includes oxide of indium, has transparency to light output from the light emitting layer, and is laminated on the second semiconductor layer;

a first joining layer that includes Pt and nitride of at least one kind of metal selected from among Ta, Nb, Ti, W and Mo, and is laminated on the first semiconductor layer;

a first connecting electrode that is laminated on the first joining layer, and is used for electric connection with an outside;

a second joining layer that is composed of the same material as the first joining layer, and is laminated on the transparent electrode; and

a second connecting electrode that is composed of the same material as the first connecting electrode, is laminated on the second joining layer, and is used for electric connection with an outside,

wherein

the first connecting electrode includes a first diffusion barrier layer that is composed of Pt, and is laminated on the first joining layer, and a first connecting electrode layer that is composed of Au or an alloy including Au, is laminated on the first diffusion barrier layer, and is used for the electric connection with the outside, and

the second connecting electrode includes a second diffusion barrier layer that is composed of the same Pt as the first diffusion barrier layer, and is laminated on the second joining layer, and a second connecting electrode layer that is composed of the same Au or alloy including Au as the first connecting electrode layer, is laminated on the second diffusion barrier layer, and is used for the electric connection with the outside.

2. The semiconductor light emitting element according to claim 1, wherein the transparent electrode contains the oxide of indium and oxide of zinc.

3. The semiconductor light emitting element according to claim 1, further comprising:

a first adhesive layer that includes at least one kind of metal selected from among Ta, Ti, Pt, Mo and Ni, and is laminated on a region of the first connecting electrode, except for a section used for the electric connection with the outside;

a second adhesive layer that is composed of the same material as the first adhesive layer, and is laminated on a region of the second connecting electrode, except for a section used for the electric connection with the outside; and

a protecting layer that is provided so as to cover the transparent electrode, the first adhesive layer and the second adhesive layer.

4. The semiconductor light emitting element according to claim 1, wherein, in a case where the first joining layer and the second joining layer include Pt and nitride of Ta, a composition ratio between the Ta and the Pt in each of the first joining layer and the second joining layer is in a range of 90:

10 to 30;

70 by weight.

5. A method for manufacturing a semiconductor light emitting element comprising:

a process of forming, on a substrate, a first semiconductor layer that has a first conductivity type, a light emitting layer that is laminated on the first semiconductor layer, and a second semiconductor layer that has a second conductivity type opposite to the type of the first semiconductor layer and is laminated on the light emitting layer;

a process of forming, on the second semiconductor layer, a transparent electrode that includes oxide of indium and has transparency to light output from the light emitting layer, and exposing the first semiconductor layer on the transparent electrode side;

a process of laminating, on an exposed section of the first semiconductor layer, a first joining layer that includes Pt and nitride of at least one kind of metal selected from among Ta, Nb, Ti, W and Mo, and laminating, on the transparent electrode, a second joining layer that is composed of the same material as the first joining layer; and

a process of laminating, on the first joining layer, a first connecting electrode that is used for electric connection with an outside, and laminating, on the second joining layer, a second connecting electrode that is composed of the same material as the first connecting electrode,

wherein

the process of laminating the first connecting electrode and the second connecting electrode comprises;

a process of laminating, on the first joining layer, a first diffusion barrier layer that is composed of Pt, and laminating, on the second joining layer, a second diffusion barrier layer that is composed of Pt; and

a process of laminating, on the first diffusion barrier layer, a first connecting electrode layer that is composed of Au or an alloy including Au and is used for the electric connection with the outside, and laminating, on the second diffusion barrier layer, a second connecting electrode layer that is composed of Au or an alloy including Au and is used for electric connection with an outside.

6. The method for manufacturing the semiconductor light emitting element according to claim 5, wherein, in the process of laminating the transparent electrode, a layer including the oxide of indium and oxide of zinc is laminated.

7. The method for manufacturing the semiconductor light emitting element according to claim 5, further comprising:

after the process of laminating the first connecting electrode and the second connecting electrode, a process of laminating a first adhesive layer that includes at least one kind of metal selected from among Ta, Ti, Pt, Mo and Ni, on a region of the first connecting electrode, except for a section used for the electric connection with the outside, and laminating a second adhesive layer that includes at least one kind of metal selected from among Ta, Ti, Pt, Mo and Ni, on a region of the second connecting electrode, except for a section used for the electric connection with the outside.

8. The method for manufacturing the semiconductor light emitting element according to claim 5, wherein, in a case where a layer including Pt and nitride of Ta is laminated as the first joining layer and the second joining layer in the process of forming the first joining layer and the second joining layer, a composition ratio between the Ta and the Pt in each of the first joining layer and the second joining layer is set to be in a range of 90:

10 to 30;

70 by weight.