Device components with surface-embedded additives and related manufacturing methods

• US 8,749,009 B2
• Filed: 08/08/2011
• Issued: 06/10/2014
• Est. Priority Date: 08/07/2010
• Status: Active Grant

• Current Assignee: TPK Holding Co., Ltd.
• Original Assignee: Innova Dynamics, Inc. (TPK Holding Co., Ltd.)
• Inventors: Young, Michael Eugene, Srinivas, Arjun Daniel, Robinson, Matthew R., Mittal, Alexander Chow
• Primary Examiner(s): Nguyen, Dao H
• Application Number:
  US13/205,526
• Publication Number:
  US 20120132930A1
• Time in Patent Office: 1,037 Days
• Field of Search: 257/434, 257/436, 257/439, 257/E21.449, 257/E31.117, 257/E31.119, 257/E31.127, 136/243, 136/246, 136/251
• US Class Current: 257/439
• CPC Class Codes: G06F 3/0445 using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
• CPC Class Codes: H01L 31/0481 characterised by the composition of the encapsulation material
• CPC Class Codes: H01L 31/05 Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells electrodes H01L31/0224; electrical interconnection of thin film solar cells formed on a common substrate H01L31/046; particular structures for electrical interconnecting of adjacent thin film solar cells in the module H01L31/0465; electrical interconnection means specially adapted for electrically connecting two or more PV modules H02S40/36
• CPC Class Codes: H01L 31/055 where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
• CPC Class Codes: H05K 1/0274 Optical details, e.g. printed circuits comprising integral optical means H05K1/0269 takes precedence; coupling light guides with opto-electronic components G02B6/42
• CPC Class Codes: H05K 1/0313 Organic insulating material
• CPC Class Codes: H05K 1/09 Use of materials for the conductive, e.g. metallic pattern
• CPC Class Codes: H05K 1/115 Via connections; Lands around holes or via connections H05K1/112 takes precedence
• CPC Class Codes: H05K 2201/0302 Properties and characteristics in general
• CPC Class Codes: H05K 2201/0326 Inorganic, non-metallic conductor, e.g. indium-tin oxide [ITO]
• CPC Class Codes: H05K 2201/0364 Conductor shape
• CPC Class Codes: H05K 2201/10977 Encapsulated connections applying non-metallic protective coatings for encapsulating mounted components H05K3/284
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y02E 10/52 PV systems with concentrators
• CPC Class Codes: Y02E 10/542 Dye sensitized solar cells

Abstract

Active or functional additives are embedded into surfaces of host materials for use as components in a variety of electronic or optoelectronic devices, including solar devices, smart windows, displays, and so forth. Resulting surface-embedded device components provide improved performance, as well as cost benefits arising from their compositions and manufacturing processes.

Claims

1. A solar device comprising:

a front cover;

a back cover;

a photoactive layer disposed between the front cover and the back cover; and

an encapsulant layer disposed between the front cover and the back cover and adjacent to the photoactive layer, wherein the encapsulant layer includes metallic nanowires at least partially embedded into the encapsulant layer.

2. The solar device of claim 1, wherein the encapsulant layer has an embedding surface, and the metallic nanowires are localized within an embedding region adjacent to the embedding surface, such that a remainder of the encapsulant layer is devoid of any metallic nanowire.

3. The solar device of claim 2, wherein the embedding surface is facing the photoactive layer.

4. The solar device of claim 2, wherein a thickness of the embedding region is less than an overall thickness of the encapsulant layer.

5. The solar device of claim 4, wherein the thickness of the embedding region is no greater than 50% of the overall thickness of the encapsulant layer.

6. The solar device of claim 5, wherein the thickness of the embedding region is no greater than 20% of the overall thickness of the encapsulant layer.

7. The solar device of claim 1, further comprising a set of bus bars at least partially covered by the encapsulant layer and extending into the encapsulant layer.

8. The solar device of claim 1, wherein a loading of the metallic nanowires in the encapsulant layer is above an electrical percolation threshold.

9. The solar device of claim 1, wherein the encapsulant layer has a sheet resistance that is no greater than 100 Ω

/sq.

10. The solar device of claim 9, wherein the sheet resistance is no greater than 15 Ω

/sq.

11. The solar device of claim 1, wherein the encapsulant layer is disposed between the front cover and the photoactive layer, and the encapsulant layer has a solar-flux weighted transmittance of at least 85%.

12. The solar device of claim 1, wherein the metallic nanowires are in electrical contact with the photoactive layer, and function as an electrode of the solar device.

13. The solar device of claim 1, wherein the metallic nanowires include silver nanowires having an average diameter in the range of 1 nm to 100 nm and an average length in the range of 500 nm to 50 μ

m.

14. The solar device of claim 1, wherein at least one of the metallic nanowires extends out from the encapsulant layer to an extent from 1 nm to 50 nm.

15. A solar device comprising:

a photovoltaic cell; and

a luminescent solar concentrator optically connected to the photovoltaic cell, wherein the luminescent solar concentrator includes;

a front cover;

a back cover; and

an interlayer disposed between the front cover and the back cover, wherein the interlayer includes a phosphor at least partially embedded into the interlayer and localized within an embedding region of the interlayer, such that a thickness of the embedding region is no greater than 40% of an overall thickness of the interlayer, and a remainder of the interlayer is substantially devoid of any phosphor, and wherein the embedded phosphor is configured to absorb incident solar radiation and emit radiation that is guided towards the photovoltaic cell.

16. The solar device of claim 15, wherein the front cover is configured to face the incident solar radiation, and the phosphor is localized within the embedding region that is adjacent to the front cover.

17. The solar device of claim 16, wherein the phosphor is fully embedded into the interlayer, but localized adjacent to the front cover.

18. The solar device of claim 15, wherein the interlayer further includes a host material including at least one of a polymer and a ceramic, and the phosphor is at least partially embedded into the host material.

19. The solar device of claim 15, wherein the phosphor is configured to perform spectral shifting of the incident solar radiation.

20. The solar device of claim 15, wherein the thickness of the embedding region is no greater than 30% of the overall thickness of the interlayer.

21. A device with surface-embedded additives, comprising:

a first cover;

a second cover; and

an interlayer disposed between the first cover and the second cover, wherein the interlayer includes;

a host material; and

metallic nanowires at least partially embedded into the host material and localized within an embedding region of the host material, wherein a thickness of the embedding region is no greater than 50% of an overall thickness of the host material, and a remainder of the host material is devoid of any metallic nanowire.

22. The device of claim 21, wherein the thickness of the embedding region is no greater than 40% of the overall thickness of the host material.

23. The device of claim 22, wherein the thickness of the embedding region is no greater than 30% of the overall thickness of the host material.

24. The device of claim 21, wherein the metallic nanowires include silver nanowires having an average diameter in the range of 1 nm to 100 nm and an average length in the range of 500 nm to 50 μ

m.

25. The device of claim 21, wherein at least one of the metallic nanowires extends out from the host material to an extent from 1 nm to 50 nm.

26. The device of claim 21, wherein the host material has a first surface adjacent to the first cover and an opposing, second surface adjacent to the second cover, and the metallic nanowires are localized within the embedding region that is adjacent to the first surface of the host material.

27. The device of claim 21, wherein the metallic nanowires are patterned, and the device is a touch sensor.

28. A device component with surface-embedded metallic nanowires, comprising:

an encapsulant including;

a host material; and

metallic nanowires at least partially embedded into the host material and localized within an embedding region of the host material, wherein a thickness of the embedding region is no greater than 50% of an overall thickness of the host material, and a remainder of the host material is devoid of any metallic nanowire.

29. The device component of claim 28, wherein the thickness of the embedding region is no greater than 20% of the overall thickness of the host material.

30. The device component of claim 28, wherein a loading of the metallic nanowires in the host material is above an electrical percolation threshold.

31. The device component of claim 28, wherein the device component has a sheet resistance that is no greater than 100 Ω

/sq.

32. The device component of claim 28, wherein the metallic nanowires include silver nanowires having an average diameter in the range of 1 nm to 100 nm and an average length in the range of 500 nm to 50 μ

m.

33. The device component of claim 28, wherein at least one of the metallic nanowires extends out from the host material to an extent from 1 nm to 50 nm.