Semiconductor device and method for manufacturing the same

• US 8,749,063 B2
• Filed: 01/18/2006
• Issued: 06/10/2014
• Est. Priority Date: 01/28/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tsurume, Takuya
• Primary Examiner(s): Landau, Matthew
• Assistant Examiner(s): Anya, Igwe U
• Application Number:
  US11/793,199
• Publication Number:
  US 20070262403A1
• Time in Patent Office: 3,065 Days
• Field of Search: 257/758, 257/E21.645, 257/E27.111, 438/618
• US Class Current: 257/758
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01025 Manganese [Mn]
• CPC Class Codes: H01L 2924/01067 Holmium [Ho]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12044 : OLED

Abstract

An object of the prevent invention is to provide a semiconductor device having a conductive film, which sufficiently serves as an antenna, and a method for manufacturing thereof. The semiconductor device has an element formation layer including a transistor, which is provided over a substrate, an insulating film provided on the element formation layer, and a conductive film serving as an antenna, which is provided on the insulating film. The insulating film has a groove. The conductive film is provided along the surface of the insulating film and the groove. The groove of the insulating film may be provided to pass through the insulating film. Alternatively, a concave portion may be provided in the insulating film so as not to pass through the insulating film. A structure of the groove is not particularly limited, and for example, the groove can be provided to have a tapered shape, etc.

Claims

1. A semiconductor device comprising:

a transistor provided over a substrate;

an insulating film provided over the transistor, wherein a groove is provided in the insulating film;

a conductive film electrically connected to the transistor; and

a protection film provided over the conductive film,

wherein the groove has a coiled shape,

wherein the conductive film is provided over at least the groove of the insulating film so that a surface of the conductive film facing the protection film forms a plurality of concave cross-sectional shapes, and

wherein the conductive film is in contact with the insulating film at a bottom of the groove.

6. The semiconductor device according to any one of claims 1 to 5, wherein the conductive film has a coiled shape.

7. The semiconductor device according to any one of claims 1 to 5, wherein the substrate has a flexibility.

8. The semiconductor device according to any one of claims 1 to 5, wherein the semiconductor device comprises an IC chip.

9. The semiconductor device according to any one of claims 1, 3, and 5, wherein the groove is formed in parallel to an outer edge of the insulating film and has a plurality of square corners so as to bend the groove from an outer portion to an inner portion.

10. The semiconductor device according to any one of claims 1, 3, and 5, wherein a bottom surface of the conductive film is in contact with the insulating film.

11. The semiconductor device according to any one of claims 1 to 5, wherein the conductive film has a curved cross section.

2. A semiconductor device comprising:

a transistor provided over a substrate;

a first insulating film provided over the transistor;

a second insulating film provided over the first insulating film, wherein a groove is provided in the second insulating film so as to expose the first insulating film;

a conductive film in contact with the first insulating film at a bottom of the groove, and electrically connected to the transistor; and

a protection film provided over the conductive film,

wherein the groove has a coiled shape, and

wherein the conductive film is provided over the groove and a portion of the second insulating film so that a surface of the conductive film facing the protection film forms a plurality of concave cross-sectional shapes.

3. A semiconductor device comprising:

an element formation layer comprising a transistor provided over a substrate; and

an antenna formation layer comprising an insulating film and a conductive film,

wherein a groove is provided in the insulating film,

wherein the groove has a coiled shape,

wherein the conductive film is provided over at least the groove of the insulating film,

wherein a lower and an upper surface of the conductive film are configured to form a plurality of concave cross-sectional shapes,

wherein the element formation layer and the antenna formation layer are attached to each other,

wherein the transistor and the conductive film are electrically connected to each other, and

wherein the conductive film is in contact with the insulating film at a bottom of the groove.

4. The semiconductor device according to claim 3,

wherein the element formation layer and the antenna formation layer are attached to each other with an adhesive agent.

5. A semiconductor device comprising:

a transistor provided over a substrate;

an insulating film provided over the transistor, wherein a groove is provided in the insulating film; and

a conductive film electrically connected to the transistor,

wherein the groove has a coiled shape,

wherein the conductive film is provided over the groove and a portion of the insulating film,

wherein a lower and an upper surface of the conductive film are configured to form a plurality of concave cross-sectional shapes,

wherein a thickness of the conductive film provided over the groove is different from that provided over the portion of the insulating film, and

wherein the conductive film is in contact with the insulating film at a bottom of the groove.

12. A method for manufacturing a semiconductor device comprising:

forming an element formation layer comprising a transistor over a substrate;

forming an insulating film over the element formation layer;

forming a groove, which has a coiled shape, in the insulating film by selectively removing the insulating film;

forming a conductive film over the insulating film and the groove so that a lower and an upper surface of the conductive film are configured to form a plurality of concave cross-sectional shapes and the conductive film is in contact with the insulating film at a bottom of the groove;

forming a pattern of the conductive film by selectively removing a part of the conductive film; and

forming a protection film to cover the pattern of the conductive film.

17. The method for manufacturing a semiconductor device according to any one of claims 12 to 14, wherein the pattern of the conductive film has a coiled shape.

18. The method for manufacturing a semiconductor device according to any one of claims 12 to 14, wherein the insulating film is formed by using a screen printing.

19. The method for manufacturing a semiconductor device according to any one of claims 12 to 14, wherein the protection film contains an organic resin.

20. The method for manufacturing a semiconductor device according to any one of claims 12 to 14, wherein the semiconductor device comprises an IC chip.

21. The method for manufacturing a semiconductor device according to any one of claims 12 to 14, wherein the groove is formed in parallel to an outer edge of the insulating film and has a plurality of square corners so as to bend the groove from an outer portion to an inner portion.

22. The method for manufacturing a semiconductor device according to any one of claims 12 to 14, wherein a bottom surface of the conductive film is in contact with the insulating film.

13. A method for manufacturing a semiconductor device comprising:

forming a separation layer over a substrate;

forming an element formation layer comprising a transistor over the separation layer;

forming an insulating film over the element formation layer;

forming a groove, which has a coiled shape, in the insulating film by selectively removing the insulating film;

forming a conductive film over the insulating film and the groove so that a lower and an upper surface of the conductive film are configured to form a plurality of concave cross-sectional shapes and the conductive film is in contact with the insulating film at a bottom of the groove;

forming a pattern of the conductive film by selectively removing a part of the conductive film;

forming a protection film to cover the pattern of the conductive film;

forming an opening by selectively removing the protection film, the insulating film and the element formation layer to expose the separation layer through the opening; and

separating the element formation layer from the substrate.

14. A method for manufacturing a semiconductor device comprising:

forming a separation layer over a first substrate;

forming an element formation layer comprising a transistor over the separation layer;

forming an insulating film over the element formation layer;

forming a groove, which has a coiled shape, in the insulating film by selectively removing the insulating film;

forming a conductive film over the insulating film and the groove so that a lower and an upper surface of the conductive film are configured to form a plurality of concave cross-sectional shapes and the conductive film is in contact with the insulating film at a bottom of the groove;

forming a pattern of the conductive film by selectively removing a part of the conductive film;

forming a protection film to cover the pattern of the conductive film;

forming an opening by selectively removing the protection film, the insulating film and the element formation layer to expose the separation layer through the opening;

attaching a second substrate to a surface of the protection film; and

separating the element formation layer from the first substrate.

15. The method for manufacturing a semiconductor device according to claim 14, wherein the separating step is conducted by a physical means.

16. The method for manufacturing a semiconductor device according to claim 14, wherein the second substrate has a flexibility.