Plasmonic modulator incorporating a solid-state phase change material

• US 8,749,866 B2
• Filed: 12/15/2011
• Issued: 06/10/2014
• Est. Priority Date: 12/15/2011
• Status: Active Grant

• Current Assignee: California Institute of Technology, Northrop Grumman Systems Corporation (Northrop Grumman Corporation)
• Original Assignee: Northrop Grumman Systems Corporation (Northrop Grumman Corporation)
• Inventors: Diest, Kenneth, Ma, James, Jankovic, Vladan, Pryce, Imogen, Briggs, Ryan, Atwater, Harry, Sweatlock, Luke
• Primary Examiner(s): Collins, Darryl J
• Assistant Examiner(s): O'NEILL, GARY WILLIAM
• Application Number:
  US13/327,298
• Publication Number:
  US 20130155484A1
• Time in Patent Office: 908 Days
• Field of Search: 359237-324, 359/900, 385 1- 11, 216/2
• US Class Current: 359/245
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02F 1/0147 based on thermo-optic effects G02F1/132 takes precedence
• CPC Class Codes: G02F 1/065 in an optical waveguide structure
• CPC Class Codes: G02F 1/23 for the control of the colour G02F1/03 - G02F1/21 take precedence
• CPC Class Codes: G02F 2203/10 plasmon

Abstract

Systems and methods are provided for modulating light of a wavelength of interest. The modulator assembly includes a plasmonic layer that supports surface plasmon polaritons at the wavelength of interest and a layer of solid-state phase change material having a first phase in which it is substantially transparent to light of the wavelength of interest and a second phase in which it is substantially opaque to light of the wavelength of interest. A control mechanism is configured to alter the phase of the solid-state phase change material between the first phase and the second phase. Each of the plasmonic layer and the layer of solid-state phase change material are configured as to provide a plasmonic mode of transmission for light of the wavelength of interest.

Claims

1. A nanoscale plasmonic modulator assembly for modulating light of a wavelength of interest comprising:

a plasmonic layer that supports surface plasmon polaritons at the wavelength of interest;

a layer of solid-state phase change material having a first phase in which it is substantially transparent to light of the wavelength of interest and a second phase in which it is substantially opaque to light of the wavelength of interest;

a dielectric layer that is substantially transparent to light of the wavelength of interest; and

a control mechanism configured to alter the phase of the solid-state phase change material between the first phase and the second phase;

wherein each of the plasmonic layer and the layer of solid-state phase change material are configured as to provide a plasmonic mode of transmission for light of the wavelength of interest.

2. The nanoscale plasmonic modulator assembly of claim 1, wherein the dielectric layer is a first dielectric layer and the assembly further comprises a second dielectric layer, the layer of solid-state phase change material being positioned between the first dielectric layer and the second dielectric layer.

3. The nanoscale plasmonic modulator assembly of claim 2, wherein the plasmonic layer is a first plasmonic layer and the assembly further comprises a second plasmonic layer, the first dielectric layer being positioned between the first plasmonic layer and the layer of solid-state phase change material, and the second dielectric layer being positioned between the layer of solid-state phase change material and the second plasmonic layer.

4. The nanoscale plasmonic modulator assembly of claim 1 , wherein the layer of solid-state phase change material is positioned between the plasmonic layer and the dielectric layer.

5. The nanoscale plasmonic modulator assembly of claim 4, wherein the plasmonic layer is a first plasmonic layer, and the assembly further comprises a second plasmonic layer, each of the layer of solid-state phase change material and the dielectric layer being positioned between the first plasmonic layer and the second plasmonic layer.

6. The nanoscale plasmonic modulator assembly of claim 1, wherein the layer of solid-state phase change material is a first layer of solid-state phase change material, and the assembly further comprises a second layer of solid-state phase change material, the plasmonic layer being positioned between the first layer of solid-state phase change material and the second layer of solid-state phase change material.

7. The nanoscale plasmonic modulator assembly of claim 1, wherein the layer of solid-state phase change material comprises a layer of vanadium oxide.

8. The nanoscale plasmonic modulator assembly of claim 7, wherein the control mechanism comprises circuitry configured to apply an electrical field to the vanadium oxide.

9. The nanoscale plasmonic modulator assembly of claim 1, wherein the layer of solid-state phase change material comprises a chalcogenide phase change film.

10. The nanoscale plasmonic modulator assembly of claim 1, wherein the control mechanism comprises an ultrafast optical pumping arrangement.

11. The nanoscale plasmonic modulator assembly of claim 1, wherein the control mechanism comprises thermal switching, via elements which heat or cool the layer of solid-state phase change material.

12. The nanoscale plasmonic modulator assembly of claim 1, wherein the dielectric layer, the plasmonic layer, and the layer of solid-state phase change material are configured to form a waveguide arrangement having at least one plasmonic mode.

13. A method for fabricating a nanoscale plasmonic modulator comprising:

depositing a solid-state phase change material on a first substrate;

depositing a first plasmonic layer on the solid-state phase change material, such that the solid-state phase change material is substantially covered by the first plasmonic layer;

depositing a second plasmonic layer on a second substrate;

bonding the first substrate to the second substrate, such that the first plasmonic layer is joined to the second plasmonic layer; and

etching substantially all of the first substrate to expose the solid-state phase change material.

14. The method of claim 13, wherein depositing a solid-state phase change material on a first substrate comprises depositing the solid-state phase change material via pulsed laser deposition.

15. The method of claim 13, further comprising depositing a third plasmonic layer on the solid-state phase change material, such that the solid-state phase change material is substantially covered by the third plasmonic layer.

16. The method of claim 13, depositing a second layer of solid-state phase change material on the second substrate prior to depositing the second plasmonic layer, such that the second plasmonic layer substantially covers the second layer of solid-state phase change material.

17. The method of claim 13, further comprising:

depositing an dielectric layer on the solid-state phase change material, such that the solid-state phase change material is substantially covered by the dielectric layer; and

depositing a third plasmonic layer on the dielectric layer.

18. The method of claim 13, further comprising weakening the first substrate via ion implantation prior to bonding the first substrate to the second substrate.

19. A nanoscale plasmonic modulator assembly for modulating light of a wavelength of interest comprising:

a plasmonic layer that is substantially opaque to light of the wavelength of interest;

a dielectric layer that is substantially transparent to light of the wavelength of interest

a layer of vanadium oxide; and

a control mechanism configured to alter the phase of the vanadium oxide between a metallic phase and an insulator phase;

wherein each of the plasmonic layer, the dielectric layer, and the layer of vanadium oxide are configured as to provide a plasmonic mode of transmission for light of the wavelength of interest.

20. The nanoscale plasmonic modulator assembly of claim 19, wherein the dielectric layer is formed from sapphire and the plasmonic layer is formed from silver.

21. The nanoscale plasmonic modulator assembly of claim 19, wherein the dielectric layer is formed from sapphire and the plasmonic layer is formed from gold.

22. The nanoscale plasmonic modulator assembly of claim 19, wherein the dielectric layer is formed from silicon dioxide and the plasmonic layer is formed from silver.

23. The nanoscale plasmonic modulator assembly of claim 19, wherein the dielectric layer is formed from silicon dioxide and the plasmonic layer is formed from gold.