Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
First Claim
1. A protection circuit comprising:
- a first diode between a signal line and a first power supply line;
a second diode between the signal line and the first power supply line in parallel to the first diode; and
a third diode between the first power supply line and a second power supply line,wherein the first diode is a diode-connected transistor,wherein the second diode has a PIN junction or a PN junction,wherein each of the first diode and the second diode is electrically connected to the signal line and the first power supply line such that a reverse bias is applied to each of the first diode and the second diode when a potential of the signal line is higher than a potential of the first power supply line,wherein a channel length of the first diode is 2 μ
m to 6 μ
m, andwherein a channel width of the first diode is 3000 μ
m to 4000 μ
m.
1 Assignment
0 Petitions
Accused Products
Abstract
It is an object to provide a protection circuit and a semiconductor device to which a countermeasure against ESD is applied. The protection circuit includes a signal line electrically connected to an integrated circuit; a first diode provided between the signal line and a first power supply line; a second diode provided in parallel to the first diode; and a third diode provided between the first power supply line and a second power supply line. The first diode is a diode formed by diode-connecting a transistor, and the second diode is a diode having a PIN junction or a PN junction. The protection circuit is particularly effective when applied to a semiconductor device manufactured using a thin film transistor.
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Citations
18 Claims
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1. A protection circuit comprising:
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a first diode between a signal line and a first power supply line; a second diode between the signal line and the first power supply line in parallel to the first diode; and a third diode between the first power supply line and a second power supply line, wherein the first diode is a diode-connected transistor, wherein the second diode has a PIN junction or a PN junction, wherein each of the first diode and the second diode is electrically connected to the signal line and the first power supply line such that a reverse bias is applied to each of the first diode and the second diode when a potential of the signal line is higher than a potential of the first power supply line, wherein a channel length of the first diode is 2 μ
m to 6 μ
m, andwherein a channel width of the first diode is 3000 μ
m to 4000 μ
m. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A protection circuit comprising:
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a thin film transistor between a signal line and a first power supply line; a first diode between the signal line and the first power supply line in parallel to the thin film transistor; and a second diode between the first power supply line and a second power supply line, wherein one of source and drain regions of the thin film transistor is connected to the signal line, the other one of the source and drain regions is connected to the first power supply line, and a gate of the thin film transistor is connected to one of the source and drain regions, wherein the first diode has a PIN junction or a PN junction, wherein each of the thin film transistor and the first diode is electrically connected to the signal line and the first power supply line such that a reverse bias is applied to each of the thin film transistor and the first diode when a potential of the signal line is higher than a potential of the first power supply line, wherein a channel length of the thin film transistor is 2 μ
m to 6 μ
m, andwherein a channel width of the thin film transistor is 3000 μ
m to 4000 μ
m. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification