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Semiconductor memory device

  • US 8,750,023 B2
  • Filed: 09/12/2011
  • Issued: 06/10/2014
  • Est. Priority Date: 09/13/2010
  • Status: Active Grant
First Claim
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1. A semiconductor memory device comprising:

  • a memory cell unit comprising a plurality of memory elements;

    a first transistor comprising a first terminal, a second terminal, and a gate;

    an inverted data output circuit comprising an input terminal and an output terminal, wherein the input terminal is electrically connected to the first terminal of the first transistor and the output terminal is electrically connected to the memory cell unit and the second terminal of the first transistor; and

    a capacitor electrically connected to the input terminal of the inverted data output circuit and the first terminal of the first transistor.

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