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Enhancement in UV curing efficiency using oxygen-doped purge for ultra low-K dielectric film

  • US 8,753,449 B2
  • Filed: 05/29/2013
  • Issued: 06/17/2014
  • Est. Priority Date: 06/25/2012
  • Status: Active Grant
First Claim
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1. A method for processing a substrate, comprising:

  • depositing an ultra low-k dielectric layer having a dielecric constant of less than about 2.5 on a substrate supported by a substrate support in a deposition chamber; and

    subjecting the deposited ultra low-k dielectric layer to a ultraviolet (UV) curing process in a UV processing chamber, comprising;

    stabilizing the UV processing chamber by flowing a purge gas and an oxygen gas into the UV processing chamber at a flow ratio of about 1 (oxygen gas);

    6400 (purge gas) to about 1 (oxygen gas);

    300 (purge gas), wherein the oxygen gas is flowed into the UV processing chamber at a flow rate of about 1.0 sccm to about 30 sccm for a 300 mm diameter substrate;

    exposing the deposited ultra low-k dielectric layer to UV radiation;

    terminating flow of the oxygen gas while still flowing purge gas into the UV processing chamber with UV radiation turned off or remains on; and

    pumping residues and unwanted produces out of the UV processing chamber.

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