Registered structure formation via the application of directed thermal energy to diblock copolymer films

• US 8,753,738 B2
• Filed: 03/04/2013
• Issued: 06/17/2014
• Est. Priority Date: 03/06/2007
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Millward, Dan B., Marsh, Eugene P.
• Primary Examiner(s): Austin, Aaron
• Assistant Examiner(s): MEHTA, MEGHA S
• Application Number:
  US13/784,353
• Publication Number:
  US 20130189492A1
• Time in Patent Office: 470 Days
• Field of Search: 428/141, 428/147, 428/156, 428/159, 428/160, 428/172, 428/173, 428/195.1
• US Class Current: 428/172
• CPC Class Codes: B81B 1/00 Devices without movable or flexible elements, e.g. microcapillary devices
• CPC Class Codes: B81C 1/00015 for manufacturing microsystems
• CPC Class Codes: B81C 1/00031 Regular or irregular arrays of nanoscale structures, e.g. etch mask layer photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002
• CPC Class Codes: B81C 2201/0149 Forming nanoscale microstructures using auto-arranging or self-assembling material
• CPC Class Codes: B81C 2201/0198 for making a masking layer
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C08L 2666/02 Organic macromolecular compounds, natural resins, waxes or and bituminous materials
• CPC Class Codes: C08L 53/00 Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: Y10S 438/947 Subphotolithographic processing
• CPC Class Codes: Y10S 977/888 Shaping or removal of materials, e.g. etching
• CPC Class Codes: Y10S 977/895 having step or means utilizing chemical property
• CPC Class Codes: Y10S 977/90 having step or means utilizing mechanical or thermal property, e.g. pressure, heat
• CPC Class Codes: Y10T 428/24479 including variation in thickness
• CPC Class Codes: Y10T 428/24612 Composite web or sheet
• CPC Class Codes: Y10T 428/24744 Longitudinal or transverse tubular cavity or cell

Abstract

Methods for fabricating sub-lithographic, nanoscale linear microchannel arrays over surfaces without defined features utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the methods use a multi-layer induced ordering approach to align lamellar films to an underlying base film within trenches, and localized heating to anneal the lamellar-phase block copolymer film overlying the trenches and outwardly over the remaining surface.

Claims

1. A substrate, comprising:

a base polymer material within a trench in a material overlying a substrate and comprising an ordered array of polymer domains; and

another polymer material comprising another ordered array of polymer domains, a first portion of the another ordered array of polymer domains on a surface of the base polymer material and comprising polymer domains registered to corresponding polymer domains of the base polymer material, and a second portion of the another ordered array of polymer domains overlying the material adjacent the trench.

2. The substrate of claim 1, wherein the base polymer material comprises alternating lamellar domains oriented parallel to sidewalls of the trench and perpendicular to a floor of the trench.

3. The substrate of claim 1, wherein the base polymer material comprises lines of half-cylinder polymer domains in a polymer matrix, the lines of half-cylinder polymer domains extending parallel to sidewalls of the trench and parallel to a floor of the trench.

4. The substrate of claim 1, wherein the another polymer material comprises lamellar polymer domains oriented perpendicular to a floor of the trench.

5. The substrate of claim 1, further comprising thermally conductive elements extending a length of the trench.

6. The substrate of claim 1, further comprising an absorptive material or a reflective material only located over a floor of the trench.

24. The substrate of claim 1, wherein the base polymer material and the another polymer material comprise separate polymer films having substantially the same pitch.

7. A substrate comprising:

a base polymer material within trenches in a material overlying a substrate, the base polymer material confined within lateral boundaries of each of the trenches; and

another polymer material on a surface of the base polymer material within the trenches and over portions of the material between the trenches, portions of the another polymer material on the surface of the base polymer material comprising polymer domains registered to corresponding polymer domains of the base polymer material.

8. The substrate of claim 7, further comprising a neutral wetting material between the another polymer material and the material.

9. The substrate of claim 7, further comprising a neutral wetting material underlying the material and the base polymer material.

10. The substrate of claim 7, further comprising a neutral wetting material substantially only located on floors of the trenches.

11. The substrate of claim 7, further comprising a reflective material on surfaces of the material.

12. The substrate of claim 7, further comprising an absorptive material on surfaces of the material.

13. The substrate of claim 7, further comprising lines of a thermally conductive material extending beneath the trenches.

25. The substrate of claim 7, wherein the base polymer material and the another polymer material comprise separate films.

14. A thin film structure, comprising:

a material over a substrate and comprising at least one trench therethrough;

an array of polymer structures laterally confined within boundaries defined by sidewalls of the at least one trench; and

another array of polymer structures registered to and on surfaces of the array of polymer structures within the at least one trench and extending over the material adjacent the at least one trench, a pitch of two polymer structures of the another array of polymer structures the same as that of two other polymer structures of the array of polymer structures within the at least one trench.

15. The thin film structure of claim 14, wherein a thickness of each polymer structure of the array of polymer structures is less than a depth of the at least one trench.

16. The thin film structure of claim 15, wherein the thickness of each polymer structure of the array of polymer structures is about one-half the depth of the at least one trench.

17. The thin film structure of claim 14, wherein a thickness of each polymer structure of the array of polymer structures is greater than a depth of the at least one trench.

18. The thin film structure of claim 17, wherein the thickness of each polymer structure of the array of polymer structures is less than the pitch of the two polymer structures of the array of polymer structures.

19. The thin film structure of claim 14, further comprising an opening between the two polymer structures of the array of polymer structures, and between the two other polymer structures of the another array of polymer structures.

20. The thin film structure of claim 19, wherein the opening is from about 5 nanometers to about 50 nanometers wide.

21. The thin film structure of claim 19, wherein the pitch of the two polymer structures of the array of polymer structures is less than or equal to about 35 nanometers.

22. The thin film structure of claim 19, wherein the array of polymer structures comprises an array of polystyrene structures, and wherein the another array of polymer structures comprises another array of polystyrene structures on surfaces of the array of polystyrene structures.

23. The thin film structure of claim 19, wherein the array of polymer structures comprises an array of poly(methyl methacrylate) structures, and wherein the another array of polymer structures comprises another array of poly(methyl methacrylate) structures on surfaces of the array of poly(methyl methacrylate) structures.