Light-emitting device and manufacturing method thereof

• US 8,753,909 B2
• Filed: 07/18/2013
• Issued: 06/17/2014
• Est. Priority Date: 02/11/2009
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Hsu, Chen-Ke, Su, Win Jim, Chuang, Chia-Ming, Ou, Chen
• Primary Examiner(s): Sun, Yu-Hsi D
• Assistant Examiner(s): WITHERS, GRANT S
• Application Number:
  US13/945,730
• Publication Number:
  US 20130302927A1
• Time in Patent Office: 334 Days
• Field of Search: 438/33, 257/E33.055
• US Class Current: 438/33
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A light emitting device and a method of fabricating thereof are provided. The method of fabricating the light emitting device comprises: providing a substrate having a first major surface and a second major surface; forming a plurality of light-emitting stacks on the first major surface; forming an etching protection layer on each of the light emitting stacks; forming a plurality of holes by a discontinuous laser beam on the substrate; etching the plurality of holes; and slicing off the substrate along the plurality of holes to form a light emitting device. The light emitting device has a substrate wherein the sidewall of the substrate comprising a first area with a substantially flat surface and a second area with substantially textured surface.

Claims

1. A method of fabricating a light-emitting device comprising:

providing a substrate;

forming a plurality of light-emitting stack layers on the substrate;

forming discontinuous holes directly on the substrate;

etching the discontinuous holes; and

cleaving the substrate along the discontinuous holes,

wherein one of the plurality of light-emitting stack layers is substantially surrounded by the discontinuous holes from a top view.

2. The method of claim 1, further comprising a step of forming an etching protection layer on the plurality of light-emitting stack layers, wherein the etching protection layer comprises a material of SiO₂ or SiNx.

3. The method of claim 2, further comprising a step of removing the etching protection layer.

4. The method of claim 1, wherein the step of etching the discontinuous holes is performed with an etching solution in a temperature ranging between 100 and 300°

C.

5. The method of claim 4, wherein the etching solution comprises H₃PO₄ or a mixture of H₃PO₄ and H₂SO₄.

6. The method of claim 1, wherein the step of forming the discontinuous holes is conducted by using a laser.

7. The method of claim 6, wherein the laser is configured to generate a laser beam in a regular or an irregular pulse.

8. The method of claim 1, further comprising a step of forming a plurality of semiconductor layers on the substrate;

and a step of forming a mesa structure by removing a portion of the plurality of light-emitting stack layers.

9. The method of claim 8, wherein the mesa structure is substantially surrounded by the discontinuous holes.

10. The method of claim 1, further comprising a step of applying a grinding process to the substrate.

11. The method of claim 10, wherein the grinding process is applied to the substrate on a surface opposite to the plurality of light-emitting stack layers.

12. The method of claim 1, wherein the discontinuous holes and the plurality of light-emitting stack layers are arranged on the same side of the substrate.

13. The method of claim 1, wherein the discontinuous holes and the plurality of light-emitting stack layers are arranged on different surfaces of the substrate.

14. The method of claim 1, wherein the discontinuous holes are arranged not to pass through the substrate.

15. The method of claim 1, wherein the discontinuous holes are opened on the substrate in a position near the plurality of light-emitting stack layers.

16. The method of claim 1, wherein the substrate comprises a convex-concave structure far from the plurality of light-emitting stack layers.

17. The method of claim 1, wherein the substrate has a side wall comprising a convex-concave structure sandwiched by flat areas.

18. The method of claim 1, wherein the substrate comprises a concave structure having different widths.

19. The method of claim 1, wherein the substrate comprises a concave structure and a convex structure having a width different from that of the concave structure.