Method of manufacturing semiconductor device
First Claim
1. A method of manufacturing a semiconductor device comprising the steps of:
- forming a silicon oxide film;
forming an amorphous oxide semiconductor layer over the silicon oxide film;
performing a first heat treatment on the amorphous oxide semiconductor layer;
forming an aluminum oxide film over the amorphous oxide semiconductor layer, after performing the first heat treatment; and
after forming the aluminum oxide film, performing a second heat treatment on the amorphous oxide semiconductor layer,wherein the amorphous oxide semiconductor layer includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state, andwherein the second heat treatment is performed at a temperature higher than a temperature of the first heat treatment.
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Abstract
In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state is formed over a silicon oxide film, an aluminum oxide film is formed over the amorphous oxide semiconductor layer, and then heat treatment is performed so that at least part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.
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Citations
14 Claims
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1. A method of manufacturing a semiconductor device comprising the steps of:
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forming a silicon oxide film; forming an amorphous oxide semiconductor layer over the silicon oxide film; performing a first heat treatment on the amorphous oxide semiconductor layer; forming an aluminum oxide film over the amorphous oxide semiconductor layer, after performing the first heat treatment; and after forming the aluminum oxide film, performing a second heat treatment on the amorphous oxide semiconductor layer, wherein the amorphous oxide semiconductor layer includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state, and wherein the second heat treatment is performed at a temperature higher than a temperature of the first heat treatment. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a semiconductor device comprising the steps of:
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forming a silicon oxide film; forming an amorphous oxide semiconductor layer over the silicon oxide film; performing a first heat treatment on the amorphous oxide semiconductor layer; forming a source electrode layer and a drain electrode layer, which are in contact with the amorphous oxide semiconductor layer; forming an aluminum oxide film over the amorphous oxide semiconductor layer, after performing the first heat treatment; and after forming the aluminum oxide film, performing a second heat treatment on the amorphous oxide semiconductor layer, thereby forming an oxide semiconductor layer comprising a channel formation region, wherein the amorphous oxide semiconductor layer includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state, and wherein the second heat treatment is performed at a temperature higher than a temperature of the first heat treatment. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification