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Method of manufacturing semiconductor device

  • US 8,753,928 B2
  • Filed: 03/07/2012
  • Issued: 06/17/2014
  • Est. Priority Date: 03/11/2011
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device comprising the steps of:

  • forming a silicon oxide film;

    forming an amorphous oxide semiconductor layer over the silicon oxide film;

    performing a first heat treatment on the amorphous oxide semiconductor layer;

    forming an aluminum oxide film over the amorphous oxide semiconductor layer, after performing the first heat treatment; and

    after forming the aluminum oxide film, performing a second heat treatment on the amorphous oxide semiconductor layer,wherein the amorphous oxide semiconductor layer includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state, andwherein the second heat treatment is performed at a temperature higher than a temperature of the first heat treatment.

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