Methods for forming a conductive material, methods for selectively forming a conductive material, methods for forming platinum, and methods for forming conductive structures

• US 8,753,933 B2
• Filed: 11/19/2008
• Issued: 06/17/2014
• Est. Priority Date: 11/19/2008
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Marsh, Eugene P.
• Primary Examiner(s): PHAM, THANHHA S
• Application Number:
  US12/274,169
• Publication Number:
  US 20100124821A1
• Time in Patent Office: 2,036 Days
• Field of Search: 438/239, 438/243, 438/253, 438/256, 438/396, 438/399, 438674-675, 438/625, 438/685
• US Class Current: 438/239
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/7687 Thin films associated with contacts of capacitors
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 28/65 comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H10B 12/033 the capacitor extending over the transistor

Abstract

Methods of selectively forming a conductive material and methods of forming metal conductive structures are disclosed. An organic material may be patterned to expose regions of an underlying material. The underlying material may be exposed to a precursor gas, such as a platinum precursor gas, that reacts with the underlying material without reacting with the remaining portions of the organic material located over the underlying material. The precursor gas may be used in an atomic layer deposition process, during which the precursor gas may selectively react with the underlying material to form a conductive structure, but not react with the organic material. The conductive structures may be used, for example, as a mask for patterning during various stages of semiconductor device fabrication.

Claims

1. A method of selectively depositing platinum, comprising:

introducing a platinum precursor gas to a surface of a conductive contact exposed through an organic material; and

reacting the platinum precursor gas with the surface of the conductive contact to form platinum thereon without reacting the platinum precursor gas with the organic material.

2. The method of claim 1, further comprising applying an etchant capable of removing organic residues on the surface of the conductive contact before introducing the platinum precursor gas thereto.

3. The method of claim 1, wherein reacting the platinum precursor gas with the surface of the conductive contact comprises reacting the platinum precursor gas selected from the group consisting of (trimethyl)methylcyclopentadienyl platinum, (trimethyl)cyclopentadienyl (C₅H₅)Pt(CH₃)₃, Pt(acetylacetonate)₂, Pt(PF₃)₄, Pt(CO)₂Cl₂, cis-[Pt(CH₃)₂((CH₃)NC)₂], and platinum hexafluoroacetylacetonate with the surface of the conductive contact.

4. A method of forming a conductive material on a semiconductor structure, comprising:

removing portions of an organic material to expose regions of an insulative material overlying a substrate;

removing the insulative material exposed by the removal of the organic material to form openings in the insulative material, the openings defined by sidewalls of the insulative material and an upper surface of the substrate;

conformally forming a conductive material comprising at least one of platinum, iridium, rhodium, ruthenium, and copper over and in contact with surfaces exposed by the openings without forming the conductive material on the organic material; and

forming a dielectric material over and in contact with the conductive material.

5. The method of claim 4, further comprising exposing the openings in the insulative material to at least one of a solution comprising hydrogen fluoride and a plasma comprising ozone before conformally forming the conductive material over and in contact with the surfaces exposed by the openings without forming the conductive material on the organic material.

6. The method of claim 4, wherein conformally forming a conductive material comprising at least one of platinum, iridium, rhodium, ruthenium, and copper over and in contact with surfaces exposed by the openings without forming the conductive material on the organic material, comprises conformally forming the conductive material over and in contact with the sidewalls of the insulative material and the upper surface of the substrate without forming the conductive material on the organic material.

7. The method of claim 4, wherein conformally forming a conductive material comprising at least one of platinum, iridium, rhodium, ruthenium, and copper over and in contact with surfaces exposed by the openings without forming the conductive material on the organic material, comprises conformally forming the conductive material consisting of platinum over and in contact with the surfaces exposed by the openings without forming the conductive material on the organic material.

8. The method of claim 4, wherein conformally forming a conductive material comprising at least one of platinum, iridium, rhodium, ruthenium, and copper over and in contact with surfaces exposed by the openings without forming the conductive material on the organic material, comprises conformally forming the conductive material by atomic layer deposition.

9. The method of claim 4, wherein conformally forming a conductive material comprising at least one of platinum, iridium, rhodium, ruthenium, and copper over and in contact with surfaces exposed by the openings without forming the conductive material on the organic material, comprises exposing the surfaces exposed by the openings to (trimethyl)methylcyclopentadienyl platinum.

10. A method for forming at least one conductive structure on a semiconductor structure, comprising:

applying an organic material over an insulative material overlying a substrate;

forming at least one opening extending through the organic material and the insulative material to expose the substrate;

subjecting the insulative material and the substrate to a precursor gas that selectively reacts with the insulative material and the substrate without reacting with the organic material to form at least one conductive material; and

forming a dielectric material over the at least one conductive material and another conductive material over the dielectric material to form at least one capacitor structure.

11. The method of claim 10, further comprising removing the organic material and the insulative material.

12. The method of claim 10, further comprising removing the organic material.

13. The method of claim 12, further comprising utilizing the at least one capacitor structure as a mask to remove an adjacent portion of the insulative material without removing the another conductive material.

14. The method of claim 13, wherein removing an adjacent portion of the insulative material comprises exposing transistor devices in the substrate.

15. The method of claim 10, wherein subjecting the insulative material and the substrate to a precursor gas that selectively reacts with the insulative material and the substrate without reacting with the organic material comprises forming the at least one conductive material by atomic layer deposition.