Three-dimensional semiconductor architecture
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:
- manufacturing a plurality of active devices at least partially within a first side of a substrate, the substrate having a peripheral region and an interior region surrounded by the peripheral region;
forming a first set of conductive vias entirely through the substrate in the peripheral region; and
forming a second set of conductive vias entirely through the substrate in the interior region, wherein the second set of conductive vias are part of a power matrix.
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Abstract
A system and method for making semiconductor die connections with through-silicon vias (TSVs) are disclosed. TSVs are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment this allows these connections to be made throughout the substrate instead of on the periphery of the substrate. In another embodiment, the TSVs are used as part of a power matrix to supply power and ground connections to the active devices and metallization layers through the substrate.
61 Citations
20 Claims
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1. A method of manufacturing a semiconductor device, the method comprising:
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manufacturing a plurality of active devices at least partially within a first side of a substrate, the substrate having a peripheral region and an interior region surrounded by the peripheral region; forming a first set of conductive vias entirely through the substrate in the peripheral region; and forming a second set of conductive vias entirely through the substrate in the interior region, wherein the second set of conductive vias are part of a power matrix. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a semiconductor device, the method comprising:
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forming active devices at least partially within a first side of a substrate, the substrate having a second side opposite the first side; forming a dielectric layer over the first side; forming conductive vias all the way through the substrate and the dielectric layer; depositing a conductive metallization region over the conductive vias and the active devices, the conductive metallization region in physical contact with at least one of the conductive vias and in electrical contact with at least one of the active devices; and forming a power matrix on the second side of the substrate in electrical contact with at least one of the conductive vias. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A method of manufacturing a semiconductor device, the method comprising:
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forming active devices on a first side of a substrate, the active devices being formed at least partially within the substrate forming a dielectric layer over the active devices; forming conductive vias through the dielectric layer and at least partially through the substrate; forming a metallization layer over the dielectric layer, the metallization layer comprising at least one conductive region in electrical connection with at least one active device; exposing the conductive vias through a second side of the substrate opposite the first side such that the conductive vias being in electrical contact with at least one active device extends from the first side to the second side; and forming a power matrix on the second side of the substrate, the power matrix being in physical contact with the conductive vias. - View Dependent Claims (17, 18, 19, 20)
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Specification