Memory element and semiconductor device, and method for manufacturing the same

• US 8,753,967 B2
• Filed: 03/18/2013
• Issued: 06/17/2014
• Est. Priority Date: 02/26/2007
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hirakata, Yoshiharu
• Primary Examiner(s): McCall Shepard, Sonya D
• Application Number:
  US13/846,154
• Publication Number:
  US 20130217201A1
• Time in Patent Office: 456 Days
• Field of Search: None
• US Class Current: 438/593
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 13/0002 using resistive RAM [RRAM] elements
• CPC Class Codes: G11C 13/0014 comprising cells based on organic memory material
• CPC Class Codes: G11C 2213/77 Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
• CPC Class Codes: G11C 2213/79 Array wherein the access device being a transistor
• CPC Class Codes: H01L 23/5252 comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10B 20/00 Read-only memory [ROM] devices
• CPC Class Codes: H10B 20/25 One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
• CPC Class Codes: H10N 70/021 Formation of switching materials, e.g. deposition of layers

Abstract

It is an object to solve inhibition of miniaturization of an element and complexity of a manufacturing process thereof. It is another object to provide a nonvolatile memory device and a semiconductor device having the memory device, in which data can be additionally written at a time besides the manufacturing time and in which forgery caused by rewriting of data can be prevented. It is further another object to provide an inexpensive nonvolatile memory device and semiconductor device. A memory element is manufactured in which a first conductive layer, a second conductive layer that is beside the first conductive layer, and conductive fine particles of each surface which is covered with an organic film are deposited over an insulating film. The conductive fine particles are deposited between the first conductive layer and the second conductive layer.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a conductive film over an insulating surface;

forming a mask over the conductive film;

performing etching to the conductive film using the mask to form a first conductive layer and a second conductive layer; and

forming a layer containing a conductive fine particle at least between a side surface of the first conductive layer and a side surface of the second conductive layer which is opposite to the side surface of the first conductive layer,

wherein a surface of the conductive fine particle is covered with an organic film.

2. A method for manufacturing a semiconductor device according to claim 1,

wherein the step for forming the mask is conducted by a nanoimprint method.

3. A method for manufacturing a semiconductor device according to claim 1,

wherein the step for forming the layer containing the conductive fine particle is conducted by a droplet discharge method.

4. A method for manufacturing a semiconductor device according to claim 1, further comprising the step of:

applying voltage between the first conductive layer and the second conductive layer so that the first conductive layer and the second conductive layer are electrically connect to each other.

5. A method for manufacturing a semiconductor device according to claim 1,

wherein the first conductive layer and the second conductive layer are electrically connectable or electrically connected to each other at least through the conductive fine particle as a result in applying voltage between the first conductive layer and the second conductive layer.

6. A method for manufacturing a semiconductor device according to claim 1,

wherein an interval between the first conductive layer and the second conductive layer is smaller than a grain size of the conductive fine particle.

7. A method for manufacturing a semiconductor device according to claim 1,

wherein the side surface of the first conductive layer and the side surface of the second conductive layer have a tapered shape.

8. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first conductive layer over an insulating surface;

forming an insulating layer over the first conductive layer;

forming a second conductive layer over the insulating layer;

performing etching to the insulating layer to expose a surface of the first conductive layer; and

forming a layer containing a conductive fine particle and overlapping with the surface of the first conductive layer and a side surface of the second conductive layer,

wherein the second conductive layer overlaps with the first conductive layer.

9. A method for manufacturing a semiconductor device according to claim 8,

wherein the first conductive layer and the second conductive layer are formed using different materials.

10. A method for manufacturing a semiconductor device according to claim 8,

wherein a surface of the conductive fine particle is covered with an organic film.

11. A method for manufacturing a semiconductor device according to claim 8,

wherein the step for forming the layer containing the conductive fine particle is conducted by a droplet discharge method.

12. A method for manufacturing a semiconductor device according to claim 8, further comprising the step of:

applying voltage between the first conductive layer and the second conductive layer so that the first conductive layer and the second conductive layer are electrically connect to each other.

13. A method for manufacturing a semiconductor device according to claim 8,

wherein the first conductive layer and the second conductive layer are electrically connectable or electrically connected to each other at least through the conductive fine particle as a result in applying voltage between the first conductive layer and the second conductive layer.

14. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first conductive layer over an insulating surface;

forming an insulating layer over the first conductive layer;

performing etching to the insulating layer to expose a side surface of the first conductive layer;

forming a second conductive layer over the etched insulating layer; and

forming a layer containing a conductive fine particle at least between the side surface of the first conductive layer and a side surface of the second conductive layer which is opposite to the side surface of the first conductive layer,

wherein a surface of the conductive fine particle is covered with an organic film.

15. A method for manufacturing a semiconductor device according to claim 14,

wherein the first conductive layer and the second conductive layer are formed using different materials.

16. A method for manufacturing a semiconductor device according to claim 14,

wherein the step for forming the layer containing the conductive fine particle is conducted by a droplet discharge method.

17. A method for manufacturing a semiconductor device according to claim 14, further comprising the step of:

applying voltage between the first conductive layer and the second conductive layer so that the first conductive layer and the second conductive layer are electrically connect to each other.

18. A method for manufacturing a semiconductor device according to claim 14,

wherein the first conductive layer and the second conductive layer are electrically connectable or electrically connected to each other at least through the conductive fine particle as a result in applying voltage between the first conductive layer and the second conductive layer.