×

Field-effect transistor, and memory and semiconductor circuit including the same

  • US 8,754,409 B2
  • Filed: 03/23/2012
  • Issued: 06/17/2014
  • Est. Priority Date: 03/25/2011
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor device comprising:

  • a circuit comprising a transistor, the transistor comprising;

    an oxide semiconductor being substantially perpendicular to an insulating surface, wherein the oxide semiconductor has a thickness of greater than or equal to 1 nm and less than or equal to 30 nm, and has a height of greater than or equal to a minimum feature size used to form the circuit;

    a gate insulating film covering the oxide semiconductor; and

    a strip-like gate covering the gate insulating film and facing at least three surfaces of the oxide semiconductor, wherein the strip-like gate has a width of greater than or equal to 10 nm and less than or equal to 100 nm.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×