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Intra die variation monitor using through-silicon via

  • US 8,754,412 B2
  • Filed: 01/03/2012
  • Issued: 06/17/2014
  • Est. Priority Date: 01/03/2012
  • Status: Expired due to Fees
First Claim
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1. An apparatus comprising:

  • at least two intra die variation monitors (IDVMONs);

    at least two through silicon vias (TSVs), wherein each of the at least two IDVMONs are embedded in each of the at least two TSVs; and

    at least two probe pads located on a backside of a wafer, wherein the at least two TSVs connect the at least two IDVMONs to the at least two probe pads.

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