Light emitting device and display

• US 8,754,428 B2
• Filed: 10/07/2009
• Issued: 06/17/2014
• Est. Priority Date: 07/29/1996
• Status: Expired due to Fees

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Shimizu, Yoshinori, Sakano, Kensho, Noguchi, Yasunobu, Moriguchi, Toshio
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): Niesz, Jamie C
• Application Number:
  US12/575,155
• Publication Number:
  US 20100019270A1
• Time in Patent Office: 1,714 Days
• Field of Search: 257/98, 257/99, 257/E33.058, 257/E33.061
• US Class Current: 257/98
• CPC Class Codes: C09K 11/7767 Chalcogenides
• CPC Class Codes: C09K 11/7774 Aluminates
• CPC Class Codes: G02B 6/0023 provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
• CPC Class Codes: G02B 6/0025 Diffusing sheet or layer; Prismatic sheet or layer
• CPC Class Codes: G02B 6/0051 Diffusing sheet or layer
• CPC Class Codes: G02B 6/0073 Light emitting diode [LED]
• CPC Class Codes: H01J 29/20 characterised by the luminescent material
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/45169 Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01021 : Scandium [Sc]
• CPC Class Codes: H01L 2924/01067 : Holmium [Ho]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/20751 : larger or equal to 10 microns less than 20 microns
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/20754 : larger or equal to 40 microns less than 50 microns
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2933/0091 : Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements
• CPC Class Codes: H01L 33/501 : characterised by the materials, e.g. binder
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/504 : Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H05B 33/14 : characterised by the chemical or physical composition or the arrangement of the electroluminescent material , or by the simultaneous addition of the electroluminescent material in or onto the light source
• CPC Class Codes: Y02B 20/00 : Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Abstract

A light emitting diode having a mount lead having a cup and a lead, an LED chip mounted in the cup of said mount lead with one of electrodes being electrically connected to said mount lead, a coating material filling the cup of said mount lead to cover said LED chip; a molding material covering said LED chip, said coating material and the cup of said mount lead, and a phosphor absorbing a part of light emitted by said LED chip and emitting light of wavelength different from that of the absorbed light, wherein said phosphor is located in said coating material, and wherein said molding material is shaped to form a concave lens.

Claims

1. A light emitting diode comprising:

a mount lead having a cup and a lead,

an LED chip mounted in the cup of said mount lead with one of electrodes being electrically connected to said mount lead,

a coating material filling the cup of said mount lead to cover said LED chip;

a molding material covering said LED chip, said coating material and the cup of said mount lead, and

a phosphor absorbing a part of light emitted by said LED chip and emitting light of wavelength different from that of the absorbed light,

wherein said phosphor is located in said coating material, and

both;

a portion of light emitted by said LED chip, and

said phosphor light of wavelength different from that of the absorbed light, emitted by said phosphor excited by said LED chip, are output from said molding material, to obtain a combined spectrum for said light emitting diode, said combined spectrum being an emission spectrum which has;

a first peak due to said portion of light emitted by the LED chip, and

a second peak, which is different from the first peak, and is due to said phosphor light emitted by said phosphor excited by the LED chip, and

wherein said molding material is transparent and has a recess portion which diffuses the light emitted by the LED chip.

2. The light emitting diode according to claim 1, wherein a concentration of said phosphor in the vicinity of said LED chip is larger than a concentration of said phosphor in the vicinity of the surface of said coating material.

3. The light emitting diode according to claim 1, wherein said molding material is selected from the group consisting of epoxy resin, urea resin, silicone resin and glass.

4. The light emitting diode according to claim 1, wherein the main emission peak of said LED chip is within the range from 400 nm to 530 nm.

5. The light emitting diode according to claim 1, wherein said LED chip emits a light having a spectrum with a peak in the range from 420 to 490 nm, said phosphor emits light having a spectrum with a peak in the range from 510 to 600 nm and a tail continuing beyond 700 nm, and said spectrum of the light emitted from said phosphor and said spectrum of the light emitted from said LED chip overlap with each other to make a continuous combined spectrum.

6. The light emitting diode according to claim 1, wherein said LED chip emits a light having a spectrum with a peak in the range from 420 to 490 nm, said spectrum of the light emitted from said phosphor has a peak in the range from 530 to 570 nm and a tail continuing beyond 700 nm, and said spectrum of the light emitted from said phosphor and said spectrum of the light emitted from said LED chip overlap with each other to make a continuous combined spectrum.

7. The light emitting diode according to claim 5, wherein a color of said combined spectrum is white.

8. The light emitting diode according to claim 1, wherein said phosphor comprises two or more kinds of fluorescent materials.

9. The light emitting diode according to claim 1, wherein said phosphor comprises an yttrium-aluminum-garnet fluorescent material containing Y and Al.

10. The light emitting diode according to claim 1, wherein said phosphor has a crystal structure.

11. The light emitting diode according to claim 1, wherein said LED chip comprises a light emitting layer of a single quantum well or multi quantum well structure.

12. The light emitting diode according to claim 1, wherein said LED chip comprises InGaN.

13. The light emitting diode according to claim 1, wherein said LED chip comprises a sapphire substrate.

14. The light emitting diode as recited in claim 1, wherein said recess portion forms a concave lens shape.