Light emitting diode

• US 8,754,438 B2
• Filed: 02/19/2012
• Issued: 06/17/2014
• Est. Priority Date: 06/30/2011
• Status: Expired due to Fees

• Current Assignee: Advanced Optoelectronic Technology, Inc.
• Original Assignee: Advanced Optoelectronic Technology, Inc.
• Inventors: Huang, Shih-Cheng, TU, PO-MIN, Huang, Chia-Hung, YANG, SHUN-KUEI, Lin, Ya-Wen
• Primary Examiner(s): Yang, Minchul
• Application Number:
  US13/400,097
• Publication Number:
  US 20130001508A1
• Time in Patent Office: 849 Days
• Field of Search: 257/13, 257/79, 257/99, 257/E33.001, 257/E33.005, 257/E33.006, 257/E33.011
• US Class Current: 257/99
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.

Claims

1. An LED, comprising:

a substrate, having a top face and a bottom face;

a buffer layer, disposed on the top face of the substrate;

an epitaxial layer, disposed on the buffer layer, comprising;

a first N-type epitaxial layer and a second N-type epitaxial layer;

a blocking layer, having patterned grooves, sandwiched between the first and the second N-type epitaxial layers, wherein the first and the second N-type epitaxial layers contacts to each other via a portion of the second N-type epitaxial layer in the patterned grooves;

a light emitting layer, disposed on the second N-type epitaxial layer; and

a P-type epitaxial layer, disposed on the light emitting layer;

a conductive layer, disposed on the P-type epitaxial layer;

a P-type electrode disposed on the conductive layer; and

an N-type electrode disposed on the blocking layer opposite to the P-type electrode, wherein the N-type electrode is separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact with the first N-type epitaxial layer.

2. The LED as claimed in claim 1, wherein the P-type electrode comprises a bonding portion located on one end of the conductive layer and an extending portion with a patterned structure.

3. The LED as claimed in claim 2, wherein the patterned structure of the extending portion is staggered with the patterned grooves inside the epitaxial layer.

4. The LED as claimed in claim 1, wherein the substrate is sapphire.

5. An LED, comprising:

a substrate, having a top face and a bottom face;

a buffer layer, disposed on the top face of the substrate;

an epitaxial layer, disposed on the buffer layer, comprising a first N-type epitaxial layer and a second N-type epitaxial layer, a blocking layer with patterned grooves and sandwiched between the first and the second N-type epitaxial layers, a light emitting layer disposed on the second N-type epitaxial layer and a P-type epitaxial layer disposed on the light emitting layer;

an N-type electrode, contacting to the first N-type epitaxial layer;

a conductive layer, disposed on the P-type epitaxial layer; and

a P-type electrode, disposed on the conductive layer;

wherein the first and the second N-type epitaxial layers contact to each other via the patterned grooves, and the N-type electrode is disposed inside the patterned grooves of the blocking layer to contact with the first N-type epitaxial layer.

6. The LED as claimed in claim 5, wherein the P-type electrode comprises a bonding portion located on one end of the conductive layer and an extending portion with a patterned structure.

7. The LED as claimed in claim 6, wherein the patterned structure of the extending portion is staggered with the patterned grooves inside the epitaxial layer.