Conduction path, semiconductor device using the same, and method of manufacturing conduction path, and semiconductor device

• US 8,754,510 B2
• Filed: 11/30/2011
• Issued: 06/17/2014
• Est. Priority Date: 12/10/2010
• Status: Active Grant

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Minamio, Masanori, Tanaka, Zyunya, Imura, Ryoutarou
• Primary Examiner(s): Parekh, Nitin
• Application Number:
  US13/577,362
• Publication Number:
  US 20120299166A1
• Time in Patent Office: 930 Days
• Field of Search: 257/674, 257/666, 257/698, 257/690, 257/E23.047
• US Class Current: 257/674
• CPC Class Codes: B21D 39/032 by fitting a projecting part integral with one plate in a hole of the other plate
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45014 Ribbon connectors, e.g. rectangular cross-section
• CPC Class Codes: H01L 2224/451 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/49537 Plurality of lead frames mounted in one device
• CPC Class Codes: H01L 23/49551 characterised by bent parts
• CPC Class Codes: H01L 23/49568 specifically adapted to facilitate heat dissipation
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/206 : Length ranges
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A conduction path includes a first conduction path forming plate (11) made of a first metal and having a through hole (13), and a second conduction path forming plate (15) made of a second metal and having a press-fit portion (17) press-fitted into the through hole. A wall surface of the through hole and a side surface of the press-fit portion forms an inclined bonding surface (18) inclined relative to a normal line of an overlap surface of the first conduction path forming plate and the second conduction path forming plate, and a bonding portion (25) formed by metal flow is formed in a region located in a periphery of the inclined bonding surface.

Claims

1. A conduction path, comprising:

a first conductor forming a first conduction path, having a plate shape, made of a first metal, and having a hole; and

a second conductor forming a second conduction path, having a plate shape, made of a second metal, and having a press-fit portion press-fitted into the hole, wherein;

an inclined bonding surface inclined relative to a normal line of a surface of the first conductor other than the hole, on which a part of the second conductor is overlapped, is formed in a wall surface of the hole and a side surface of the press-fit portion,

a bonding portion, at which newly formed surfaces of the hole and the press-fit portion, respectively, are bonded together, is formed in a region located in a periphery of the inclined bonding surface, the newly formed surfaces being surfaces formed by plastic flow caused when the press-fit portion is press-fitted into the hole,

at the bonding portion, the first metal and the second metal are integrated with each other and wherein the hole is a through hole.

2. The conduction path of claim 1, wherein:

a plating film made of a third metal is formed on the second conductor except for, at least, the inclined bonding surface and a tip surface of the press-fit portion of the second conductor, and

a hardness of the third metal is greater than that of the first metal and the second metal.

3. The conduction path of claim 2, wherein

the first metal and the second metal are copper, and

the third metal is nickel.

4. The conduction path of claim 2, wherein

in the bonding portion, a plurality of crystal grains made of the third metal are dispersed along the inclined bonding surface.

5. The conduction path of claim 1, wherein

on the first conductor, a metal oxide film is formed in a region except for the inclined bonding surface.

6. The conduction path of claim 1, wherein

an inclined angle of the inclined bonding surface relative to the normal line is 20°

or more and 50°

or less.

7. The conduction path of claim 1, wherein

a thickness of the second conductor is thinner than that of the first conductor.

8. A semiconductor device, comprising:

the conduction path of claim 1;

a semiconductor chip electrically connected to the conduction path; and

an outer body including the conduction path and a resin material encapsulating the semiconductor chip.

9. The conduction path of claim 1, wherein

a thickness of the press-fit portion of the second conductor at a center of the hole is smaller than a thickness of a part of the second conductor disposed on the first conductor.