Latch circuit and semiconductor device
First Claim
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1. A latch circuit comprising:
- a first inverter and a second inverter, each comprising an input terminal and an output terminal;
a diode comprising an anode and a cathode;
a switch comprising a first terminal and a second terminal;
a transistor comprising a source terminal and a drain terminal; and
a capacitor,wherein the switch is electrically connected in parallel to the diode,wherein the output terminal of the first inverter is electrically connected to the input terminal of the second inverter through the diode and the switch,wherein the output terminal of the second inverter is electrically connected to the input terminal of the first inverter, andwherein one of the source terminal and the drain terminal of the transistor is electrically connected to the cathode of the diode, to the switch and to the input terminal of the second inverter.
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Accused Products
Abstract
A nonvolatile latch circuit is provided. In the latch circuit, a transistor in which a channel region is formed with an oxide semiconductor, which is a wide band gap semiconductor, is included, and data is stored in a node formed by one terminal of a capacitor and one of a source and a drain of the transistor, and is brought into a floating state when the transistor is turned off. After that, even when charge stored in the node is insufficient at time of restoring the data, charge is supplied by feedback; therefore, time necessary for restoring the data can be shortened and even when the power supply is restarted in the state of storing data, the data can be restored at high speed.
154 Citations
22 Claims
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1. A latch circuit comprising:
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a first inverter and a second inverter, each comprising an input terminal and an output terminal; a diode comprising an anode and a cathode; a switch comprising a first terminal and a second terminal; a transistor comprising a source terminal and a drain terminal; and a capacitor, wherein the switch is electrically connected in parallel to the diode, wherein the output terminal of the first inverter is electrically connected to the input terminal of the second inverter through the diode and the switch, wherein the output terminal of the second inverter is electrically connected to the input terminal of the first inverter, and wherein one of the source terminal and the drain terminal of the transistor is electrically connected to the cathode of the diode, to the switch and to the input terminal of the second inverter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A latch circuit comprising:
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a first switch; a first inverter comprising an input terminal electrically connected to a terminal of the first switch; a diode comprising an anode and a cathode, the anode being electrically connected to an output terminal of the first inverter at a node (A); a first transistor comprising a source terminal and a drain terminal, one of the source terminal and the drain terminal being electrically connected to the cathode of the diode at a node (B); a capacitor electrically connected to the other of the source terminal and the drain terminal of the first transistor; a second switch electrically connected in parallel with the diode between the node (A) and the node (B); a second transistor comprising a source terminal and a drain terminal, one of the source terminal and the drain terminal being electrically connected to the node (B); a second inverter comprising an input electrically connected to the node (B); and a third switch electrically connecting an output of the second inverter to the terminal of the first switch and to the input of the first inverter. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A latch circuit comprising:
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a first switch; a first inverter comprising an input terminal electrically connected to a terminal of the first switch; a diode comprising an anode and a cathode, the anode being electrically connected to an output terminal of the first inverter at a node (A); a first transistor comprising a source terminal and a drain terminal, one of the source terminal and the drain terminal being electrically connected to the cathode of the diode at a node (B); a capacitor electrically connected to the other of the source terminal and the drain terminal of the first transistor; a second switch electrically connected in parallel with the diode between the node (A) and the node (B); a second transistor comprising a source terminal and a drain terminal, one of the source terminal and the drain terminal being electrically connected to the node (B); a second inverter comprising an input electrically connected to the node (B); and a third switch electrically connecting an output of the second inverter to the terminal of the first switch and to the input of the first inverter, wherein the first transistor comprises a channel formation region in an oxide semiconductor layer. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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Specification