Semiconductor device and method of manufacturing semiconductor device
First Claim
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1. A method of manufacturing a semiconductor device, comprising:
- forming an insulating film, including Si and C, over a substrate;
forming an organic silica film, having a composition ratio of the number of carbon atoms to the number of silicon atoms higher than that of said insulating film, over said insulating film; and
forming two or more concave portions, having different opening diameters, in said organic silica film, by plasma processing in which mixed gas including inert gas, N-containing gas, fluorocarbon gas and oxidant gas is used.
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Abstract
A method of manufacturing a semiconductor device includes: forming a cap insulating film, including Si and C, on a substrate; forming an organic silica film, having a composition ratio of the number of carbon atoms to the number of silicon atoms higher than that of the cap insulating film, on the cap insulating film; and forming two or more concave portions, having different opening diameters, in the organic silica film, by plasma processing in which mixed gas including inert gas, N-containing gas, fluorocarbon gas and oxidant gas is used.
60 Citations
15 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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forming an insulating film, including Si and C, over a substrate; forming an organic silica film, having a composition ratio of the number of carbon atoms to the number of silicon atoms higher than that of said insulating film, over said insulating film; and forming two or more concave portions, having different opening diameters, in said organic silica film, by plasma processing in which mixed gas including inert gas, N-containing gas, fluorocarbon gas and oxidant gas is used. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 14, 15)
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13. A method of manufacturing a semiconductor device, comprising:
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i) forming a lower-layer interconnect structure (1) constituted by a substrate (1a), horizontally spaced apart first and second Cu films (1c) within the substrate (1a), and a cap insulating film (1d) contacting the substrate (1a) and the Cu films (1c), the cap insulating film (id) including Si and C with a first composition ratio of carbon atoms to silicon atoms; ii) sequentially forming an organic silica film (2) for an upper-layer interconnect over the cap insulating film (id), the organic silica film (2) having a second composition ratio of carbon atoms to silicon atoms, the second composition ratio being greater than the first composition ratio; and iii) plasma etching, at a predetermined etching rate, first via (5) and a second via (6) through the organic silica film (2) and into the cap insulating film (id) in vertical registration over the first and second Cu films (1c), the first via (5) being separate from the second via (6) and having an opening diameter different from an opening diameter of the columnar via, the first via (5) and the second via (6) being etched at a same time and at a same etching rate, a remaining thickness of the cap insulating film (id) being equal below the first via (5) and the second via (6), wherein said step of plasma etching in said organic silica film uses a mixed gas including Argon gas, N-containing gas, fluorocarbon gas, and an oxidant gas, wherein a ratio of the flow rate of said N-containing gas to the flow rate of said Argon gas is selected to achieve the predetermined etching rate, the ratio of the flow rate of said N-containing gas to the flow rate of said Argon gas being 1 or greater.
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Specification