Semiconductor device comprising oxide semiconductor layer as channel formation layer

• US 8,759,829 B2
• Filed: 08/14/2012
• Issued: 06/24/2014
• Est. Priority Date: 03/27/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Uochi, Hideki, Kawae, Daisuke
• Primary Examiner(s): Jahan, Bilkis
• Application Number:
  US13/585,077
• Publication Number:
  US 20120305914A1
• Time in Patent Office: 679 Days
• Field of Search: 257/59, 257/72, 257/43, 257/296, 257/449, 257/E29.095, 257/E33.053
• US Class Current: 257/43
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13458 Terminal pads
• CPC Class Codes: G02F 1/13629 Multilayer wirings
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

To reduce adverse effects on actual operation and to reduce adverse effects of noise. A structure including an electrode, a wiring electrically connected to the electrode, an oxide semiconductor layer overlapping with the electrode in a plane view, an insulating layer provided between the electrode and the oxide semiconductor layer in a cross-sectional view, and a functional circuit to which a signal is inputted from the electrode through the wiring and in which operation is controlled in accordance with the signal inputted. A capacitor is formed using an oxide semiconductor layer, an insulating layer, and a wiring or an electrode.

Claims

1. A semiconductor device comprising:

a resistor;

a capacitor comprising;

a first conductive layer;

a first insulating layer over the first conductive layer;

a first oxide semiconductor layer over the first conductive layer with the first insulating layer interposed therebetween;

a second insulating layer over the first oxide semiconductor layer; and

a second conductive layer over the first oxide semiconductor layer with the second insulating layer interposed therebetween, wherein the first conductive layer is overlapped with the second conductive layer with the first oxide semiconductor layer interposed therebetween, and

a circuit comprising a transistor,

wherein the transistor comprises a second oxide semiconductor layer as a channel formation layer, and

wherein one terminal of the resistor is electrically connected to the first conductive layer and the circuit.

2. The semiconductor device according to claim 1, wherein the first conductive layer is electrically connected to the circuit.

3. The semiconductor device according to claim 1, wherein the second insulating layer is formed over the transistor.

4. The semiconductor device according to claim 1,

wherein the transistor comprises the first insulating layer as a gate insulating layer.

5. The semiconductor device according to claim 1, wherein the first oxide semiconductor layer is in a floating state.

6. The semiconductor device according to claim 1, wherein the first oxide semiconductor layer includes at least one selected from the group consisting of indium, gallium, and zinc.

7. The semiconductor device according to claim 1, wherein the first oxide semiconductor layer and the second oxide semiconductor layer are made of the same material.

8. A display module comprising the semiconductor device according to claim 1, comprising a flexible wiring board.

9. An electronic apparatus comprising the semiconductor device according to claim 1, comprising at least one of a speaker, a battery, and an operation key.

10. A semiconductor device comprising:

a resistor;

a capacitor comprising;

a first conductive layer;

a first insulating layer over the first conductive layer; and

a first oxide semiconductor layer over the first conductive layer with the first insulating layer interposed therebetween,

a second insulating layer over the first oxide semiconductor layer; and

a second conductive layer over the first oxide semiconductor layer with the second insulating layer interposed therebetween, wherein the first conductive layer is overlapped with the second conductive layer with the first oxide semiconductor layer interposed therebetween, and

a circuit comprising a transistor,

wherein the transistor comprises a second oxide semiconductor layer as a channel formation layer,

wherein one terminal of the resistor is electrically connected to the first conductive layer and the circuit, and

wherein the second conductive layer is in contact with the first conductive layer through a contact hole opened through the first insulating layer and the second insulating layer.

11. The semiconductor device according to claim 10, wherein the first conductive layer is electrically connected to the circuit.

12. The semiconductor device according to claim 10, wherein the first oxide semiconductor layer is in a floating state.

13. The semiconductor device according to claim 10, wherein the first oxide semiconductor layer includes at least one selected from the group consisting of indium, gallium, and zinc.

14. The semiconductor device according to claim 10, wherein the first oxide semiconductor layer and the second oxide semiconductor layer are made of the same material.

15. A display module comprising the semiconductor device according to claim 10, comprising a flexible wiring board.

16. An electronic apparatus comprising the semiconductor device according to claim 10, comprising at least one of a speaker, a battery, and an operation key.