Light emitting diode
First Claim
1. A light emitting diode, comprising:
- a substrate having an epitaxial growth surface and a light emitting surface opposite to the epitaxial growth surface;
a first semiconductor layer located on the epitaxial growth surface, wherein the first semiconductor layer has a first surface and a second surface, and the first surface contacts the epitaxial growth surface;
an active layer stacked on the second surface of the first semiconductor layer;
a second semiconductor layer stacked on the active layer;
a first electrode electrically connected with the first semiconductor layer;
a second electrode covering an entire surface of the second semiconductor layer away from the active layer; and
a plurality of three-dimensional nano-structures located on the second surface of the first semiconductor layer, wherein each of the plurality of three-dimensional nano-structures has a first peak and a second peak aligned side by side, a first groove is defined between the first peak and the second peak, a second groove is defined between each two adjacent three-dimensional nano-structures of the plurality of three-dimensional nano-structures, and a depth of the first groove is less than a depth of the second groove.
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Accused Products
Abstract
A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.
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Citations
20 Claims
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1. A light emitting diode, comprising:
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a substrate having an epitaxial growth surface and a light emitting surface opposite to the epitaxial growth surface; a first semiconductor layer located on the epitaxial growth surface, wherein the first semiconductor layer has a first surface and a second surface, and the first surface contacts the epitaxial growth surface; an active layer stacked on the second surface of the first semiconductor layer; a second semiconductor layer stacked on the active layer; a first electrode electrically connected with the first semiconductor layer; a second electrode covering an entire surface of the second semiconductor layer away from the active layer; and a plurality of three-dimensional nano-structures located on the second surface of the first semiconductor layer, wherein each of the plurality of three-dimensional nano-structures has a first peak and a second peak aligned side by side, a first groove is defined between the first peak and the second peak, a second groove is defined between each two adjacent three-dimensional nano-structures of the plurality of three-dimensional nano-structures, and a depth of the first groove is less than a depth of the second groove. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A light emitting diode, comprising:
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a substrate having an epitaxial growth surface and a light emitting surface opposite to the epitaxial growth surface; a first semiconductor located on the epitaxial growth surface, wherein the first semiconductor layer has a first surface and a second surface, and the first surface contacts the epitaxial growth surface of the substrate; an active layer stacked on the second surface of the first semiconductor layer; a second semiconductor layer stacked on the active layer; a first electrode electrically connected with the first semiconductor layer; a second electrode electrically connected with the second semiconductor layer; and a plurality of three-dimensional nano-structures located on the second surface of the first semiconductor layer and aligned side by side, wherein a cross section of each of the plurality of three-dimensional nano-structures is M-shaped, and the active layer is engaged with the plurality of three-dimensional nano-structures. - View Dependent Claims (16)
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17. A light emitting diode, comprising:
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a substrate having an epitaxial growth surface and a light emitting surface opposite to the epitaxial growth surface; a first semiconductor located on the epitaxial growth surface, wherein the first semiconductor layer has a first surface and a second surface, and the first surface is connected with the epitaxial growth surface of the substrate; an active layer stacked on the second surface of the first semiconductor layer; a second semiconductor layer stacked on the active layer; a first electrode electrically connected with the first semiconductor layer; a second electrode electrically connected with the second semiconductor layer; and a plurality of first three-dimensional nano-structures located on the second surface of the first semiconductor layer and aligned side by side; and a plurality of second three-dimensional nano-structures located on the surface of the active layer away from the first semiconductor layer, wherein a cross section of each of the plurality of first three-dimensional nano-structure is M-shaped, and a cross section of each of the plurality of second three-dimensional nano-structure is M-shaped. - View Dependent Claims (18, 19, 20)
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Specification