Field plate trench transistor and method for producing it
First Claim
Patent Images
1. A semiconductor including a field plate trench transistor comprising:
- a trench structure;
an electrode structure embedded in the trench structure, the electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure arranged below and/or alongside the gate electrode structure and electrically insulated from the latter; and
a voltage divider integrated into the field electrode structure or provided within mesa zones such that the field electrode structure is set to a potential lying between source and drain potentials and/or gate and drain potentials, the voltage divider including a series circuit comprising at least one resistor and at least one diode forward-biased with respect to the drain potential, the series circuit connected between source and drain potentials.
1 Assignment
0 Petitions
Accused Products
Abstract
A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.
-
Citations
14 Claims
-
1. A semiconductor including a field plate trench transistor comprising:
-
a trench structure; an electrode structure embedded in the trench structure, the electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure arranged below and/or alongside the gate electrode structure and electrically insulated from the latter; and a voltage divider integrated into the field electrode structure or provided within mesa zones such that the field electrode structure is set to a potential lying between source and drain potentials and/or gate and drain potentials, the voltage divider including a series circuit comprising at least one resistor and at least one diode forward-biased with respect to the drain potential, the series circuit connected between source and drain potentials. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A field plate trench transistor having a semiconductor body comprising:
-
a trench structure; an electrode structure embedded in the trench structure, the electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure arranged below and/or alongside the gate electrode structure and electrically insulated from the latter; and a voltage divider which is integrated into the field electrode structure or provided within the mesa zones (adjoining trenches containing field plates), the voltage divider being configured such that the field electrode structure is set to a potential lying between source and drain potentials and/or gate and drain potentials, wherein the voltage divider is realized as a series circuit comprising at least one resistor and at least one diode which is forward-biased with respect to the drain potential, the series circuit connected between source and drain potentials. - View Dependent Claims (9, 10, 11, 12, 13, 14)
-
Specification