Thin-film transistor having etch stop multi-layer and method of manufacturing the same
First Claim
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1. A thin-film transistor (TFT) comprising:
- a gate insulation layer on a gate;
a channel layer on the gate insulation layer, the gate corresponding with the channel layer;
first and second etch stop layers sequentially stacked on a portion of the channel layer, the first and second etch stop layers being formed of a same material, and the second etch stop layer being structurally denser than the first etch stop layer;
a source and a drain contacting ends of the channel layer; and
a passivation layer on the at least two etch stop layers, the source and the drain.
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Abstract
A thin-film transistor (TFT) may include a channel layer, an etch stop multi-layer, a source, a drain, a gate, and a gate insulation layer. The etch stop multi-layer may include a first etch stop layer and a second etch stop layer. The second etch stop layer may prevent or reduce an etchant from contacting the channel layer.
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Citations
18 Claims
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1. A thin-film transistor (TFT) comprising:
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a gate insulation layer on a gate; a channel layer on the gate insulation layer, the gate corresponding with the channel layer; first and second etch stop layers sequentially stacked on a portion of the channel layer, the first and second etch stop layers being formed of a same material, and the second etch stop layer being structurally denser than the first etch stop layer; a source and a drain contacting ends of the channel layer; and a passivation layer on the at least two etch stop layers, the source and the drain. - View Dependent Claims (2, 3, 4, 5, 6, 7, 15, 16, 17, 18)
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8. A method of manufacturing a thin film transistor (TFT), the method comprising:
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forming a gate insulation layer on a gate; forming a channel layer on the gate insulation layer, the channel layer corresponding to the gate; forming first and second etch stop layers sequentially stacked on the channel layer, the first and second etch stop layers covering a portion of the channel layer and being formed of a same material, the second etch stop layer being structurally denser than the first etch stop layer; forming a source and a drain on each end of the channel layer; and forming a passivation layer on the at least two etch stop layers, the source, and the drain. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification