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Thin-film transistor having etch stop multi-layer and method of manufacturing the same

  • US 8,759,917 B2
  • Filed: 12/28/2010
  • Issued: 06/24/2014
  • Est. Priority Date: 01/04/2010
  • Status: Expired due to Fees
First Claim
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1. A thin-film transistor (TFT) comprising:

  • a gate insulation layer on a gate;

    a channel layer on the gate insulation layer, the gate corresponding with the channel layer;

    first and second etch stop layers sequentially stacked on a portion of the channel layer, the first and second etch stop layers being formed of a same material, and the second etch stop layer being structurally denser than the first etch stop layer;

    a source and a drain contacting ends of the channel layer; and

    a passivation layer on the at least two etch stop layers, the source and the drain.

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