Semiconductor physical quantity sensor

• US 8,759,926 B2
• Filed: 02/24/2011
• Issued: 06/24/2014
• Est. Priority Date: 03/17/2010
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Fujii, Tetsuo, Gotoh, Keisuke
• Primary Examiner(s): SHINGLETON, MICHAEL B
• Application Number:
  US13/033,941
• Publication Number:
  US 20110227174A1
• Time in Patent Office: 1,216 Days
• Field of Search: 257/414, 257/415, 257417-420, 257/E29.324
• US Class Current: 257/414
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2203/0307 Anchors
• CPC Class Codes: B81B 2207/095 through the lid
• CPC Class Codes: B81B 7/0006 Interconnects
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type
• CPC Class Codes: G01P 2015/0877 using integrated interconnect structures
• CPC Class Codes: G01P 2015/088 for providing wafer-level encapsulation
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Abstract

In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.

Claims

1. A semiconductor physical quantity sensor comprising:

a sensor unit including;

a support substrate having a surface made of an electrically insulating material;

a first semiconductor substrate divided into a predetermined shape to include a sensor structure, a sensor peripheral portion and a connector portion, the sensor peripheral portion having a loop-shape entirely surrounding a periphery of the sensor structure and the connector portion;

a pattern portion disposed along a surface of the first semiconductor substrate, the pattern portion including a wiring pattern as a wiring and a peripheral pattern, the wiring pattern electrically connecting the sensor structure and the connector portion, and the peripheral pattern having a loop shape entirely surrounding a periphery of the sensor structure and the connector portion, and being electrically connected to the sensor peripheral portion, wherein the wiring pattern and the peripheral pattern are bonded to the surface of the support substrate to join the first semiconductor substrate and the support substrate to each other, and the peripheral pattern is located between the sensor peripheral portion and the support substrate;

a cap having a substantially plate shape and bonded to the first semiconductor substrate on an opposite side of the support substrate to hermetically seal the sensor structure;

a first penetrating electrode that passes through the support substrate in a layering direction in which the first semiconductor substrate and the support substrate are layered and is electrically connected to the wiring pattern, and

a third penetrating electrode that passes through the support substrate in a layering direction in which the first semiconductor substrate and the support substrate are layered, and is electrically connected to the sensor peripheral portion through the peripheral pattern.

2. The semiconductor physical quantity sensor according to claim 1, wherein

the support substrate includes a second semiconductor substrate and an electrically insulating layer disposed along a surface of the second semiconductor substrate so that the surface of the support substrate is provided by the electrically insulating layer,

the first semiconductor substrate includes an embedded portion in an area surrounded by the sensor peripheral portion,

the embedded portion is bonded to the electrically insulating layer through the pattern portion,

the sensor unit has an embedded wire that is disposed in a through hole passing through the embedded portion, the pattern portion disposed between the embedded portion and the electrically insulating layer, and the electrically insulating layer, and the embedded wire is electrically connected to the second semiconductor substrate, and

the cap has a portion bonded to the embedded portion, and

the semiconductor physical quantity sensor further comprising:

second penetrating electrode that passes through the cap in a layering direction in which the first semiconductor substrate and the support substrate are layered and is electrically connected to the embedded wire.

3. The semiconductor physical quantity sensor according to claim 1, wherein

the support substrate includes a second semiconductor substrate, a first electrically insulating layer disposed on a first surface of the second semiconductor substrate so that the surface of the support substrate is provided by the first electrically insulting layer, and a second electrically insulating layer disposed on a second surface of the second semiconductor substrate,

the semiconductor physical quantity sensor further comprising:

a second penetrating electrode that passes through the second electrically insulating layer and is electrically connected to the second semiconductor substrate.