Schottky junction diode devices in CMOS with multiple wells
First Claim
1. A Schottky junction diode device, comprising:
- a substrate including substrate material of a first conductivity type and first dopant concentration;
a first well, disposed in the substrate, including material of a second conductivity type and second dopant concentration, the second conductivity type opposite to the first conductivity type;
a second well, disposed in the first well, including material of the first conductivity type and third dopant concentration;
a second well contact within the second well, the second well contact comprising contact material of the first conductivity type and fourth dopant concentration higher than the first or the third dopant concentration;
a region of metal-containing material disposed in the second well to form a Schottky junction at an interface between the region of metal-containing material and the second well;
a third well, disposed in the substrate, including material of the first conductivity type and fifth dopant concentration lower than the fourth dopant concentration, wherein a portion of the substrate material of the first conductivity type and the first dopant concentration separates the third well and the first well to reduce capacitance of the Schottky junction diode device; and
a third well contact within the third well, the third well contact comprising contact material of the first conductivity type and sixth dopant concentration higher than the fifth dopant concentration.
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Accused Products
Abstract
A Schottky junction diode device having improved performance and a multiple well structure is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first well is disposed over the substrate. The first well includes a material doped differently, such as to a second conductivity type opposite that of the first conductivity type. A second well is disposed within the first well. A region of metal-containing material is disposed in the second well to form a Schottky junction at an interface between the region of metal-containing material and the second well. In one embodiment, a second well contact is disposed in a portion of the second well.
13 Citations
33 Claims
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1. A Schottky junction diode device, comprising:
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a substrate including substrate material of a first conductivity type and first dopant concentration; a first well, disposed in the substrate, including material of a second conductivity type and second dopant concentration, the second conductivity type opposite to the first conductivity type; a second well, disposed in the first well, including material of the first conductivity type and third dopant concentration; a second well contact within the second well, the second well contact comprising contact material of the first conductivity type and fourth dopant concentration higher than the first or the third dopant concentration; a region of metal-containing material disposed in the second well to form a Schottky junction at an interface between the region of metal-containing material and the second well; a third well, disposed in the substrate, including material of the first conductivity type and fifth dopant concentration lower than the fourth dopant concentration, wherein a portion of the substrate material of the first conductivity type and the first dopant concentration separates the third well and the first well to reduce capacitance of the Schottky junction diode device; and a third well contact within the third well, the third well contact comprising contact material of the first conductivity type and sixth dopant concentration higher than the fifth dopant concentration. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for manufacturing a Schottky junction diode device, comprising:
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forming a substrate including substrate material of a first conductivity type and first dopant concentration; forming a first well, disposed in the substrate, including material of a second conductivity type and second dopant concentration, the second conductivity type opposite to the first conductivity type; forming a second well, disposed in the first well, including material of the first conductivity type and third dopant concentration; forming a second well contact within the second well, the second well contact comprising contact material of the first conductivity type and fourth dopant concentration higher than the first or the third dopant concentration; forming a region of metal-containing material disposed in the second well to form a Schottky junction at an interface between the region of metal-containing material and the second well; forming a third well disposed in the substrate and separated from the first well by a part of the substrate material of the first conductivity type and the first dopant concentration to reduce capacitance of the Schottky junction diode device, the third well including material of the first conductivity type and fifth dopant concentration lower than the fourth dopant concentration; and forming a third well contact within the third well, the third well contact comprising contact material of the first conductivity type and sixth dopant concentration higher than the fifth dopant concentration. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 33)
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32. The method of clam 20, wherein the first well, forming the second well, forming the second well contact, forming the region of metal-containing material, forming the third well, and forming the third well contact are part of a standard Complementary Metal-Oxide-Semiconductor (CMOS) process.
Specification