Light-emitting device and electronic device using the same
First Claim
1. A manufacturing method of a light-emitting device, the manufacturing method comprising the steps of:
- forming an element formation layer over a first substrate, wherein the element formation layer is formed by a method comprising the steps of;
forming a thin film transistor over the first substrate;
forming a first insulating film over the thin film transistor;
forming a color filter over the first insulating film;
forming an interlayer insulating film over the color filter; and
forming a first electrode having light-transmitting ability over the interlayer insulating film, wherein the first electrode is electrically connected to the thin film transistor;
bonding the element formation layer with a second substrate, allowing the element formation layer to be sandwiched between the first substrate and the second substrate;
separating the first substrate from the element formation layer;
bonding the element formation layer with a third substrate, allowing the element formation layer to be sandwiched between the second substrate and the third substrate;
separating the second substrate from the element formation layer;
forming an EL layer over the first electrode; and
forming a second electrode over the EL layer,wherein the third substrate is a plastic substrate having light-transmitting ability.
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Accused Products
Abstract
A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; an interlayer insulating film over the color filter; and a white-emissive light-emitting element formed over the interlayer insulating film and being electrically connected to the thin film transistor.
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Citations
40 Claims
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1. A manufacturing method of a light-emitting device, the manufacturing method comprising the steps of:
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forming an element formation layer over a first substrate, wherein the element formation layer is formed by a method comprising the steps of; forming a thin film transistor over the first substrate; forming a first insulating film over the thin film transistor; forming a color filter over the first insulating film; forming an interlayer insulating film over the color filter; and forming a first electrode having light-transmitting ability over the interlayer insulating film, wherein the first electrode is electrically connected to the thin film transistor; bonding the element formation layer with a second substrate, allowing the element formation layer to be sandwiched between the first substrate and the second substrate; separating the first substrate from the element formation layer; bonding the element formation layer with a third substrate, allowing the element formation layer to be sandwiched between the second substrate and the third substrate; separating the second substrate from the element formation layer; forming an EL layer over the first electrode; and forming a second electrode over the EL layer, wherein the third substrate is a plastic substrate having light-transmitting ability. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A manufacturing method of a light-emitting device, the manufacturing method comprising the steps of:
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forming a color filter over a first substrate; forming a first insulating layer over the first substrate; forming an element formation layer over the first insulating layer, wherein the element formation layer is formed by a method comprising the steps of; forming a thin film transistor over the first insulating layer; forming an interlayer insulating film over the thin film transistor; forming a first electrode having light-transmitting ability over the interlayer insulating film, wherein the first electrode is electrically connected to the thin film transistor; bonding the element formation layer with a second substrate, allowing the element formation layer to be sandwiched between the first substrate and the second substrate; separating the first substrate from the color filter; bonding the element formation layer with a third substrate, allowing the color filter, the first insulating layer, and the element formation layer to be sandwiched between the second substrate and the third substrate; separating the second substrate from the element formation layer; forming an EL layer over the first electrode; and forming a second electrode over the EL layer, wherein the third substrate is a plastic substrate having light-transmitting ability. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A light-emitting device comprising:
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a flexible substrate having light-transmitting ability; a thin film transistor over the flexible substrate with an adhesive provided therebetween; a first insulating film over the thin film transistor; a color filter over the first insulating film; a light-emitting element over the color filter and comprising; a first electrode having light-transmitting ability and being electrically connected to the thin film transistor; an EL layer over the first electrode; and a second electrode over the EL layer; and a protective film over the light-emitting element, wherein the thin film transistor is overlapped with the color filter, and wherein the thin film transistor comprises an oxide semiconductor layer. - View Dependent Claims (20, 21, 22, 23, 24)
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25. A light-emitting device comprising:
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a flexible substrate having light-transmitting ability; a color filter over the flexible substrate with an adhesive provided therebetween; a first insulating film over the color filter; a thin film transistor over the first insulating film; an interlayer insulating film over the thin film transistor; a light-emitting element over the color filter and comprising; a first electrode having light-transmitting ability; an EL layer over the first electrode; and a second electrode over the EL layer; and a protective film over the light-emitting element, wherein the thin film transistor comprises an oxide semiconductor layer, and wherein the color filter is positioned between the flexible substrate and the thin film transistor. - View Dependent Claims (26, 27, 28, 29)
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30. A light-emitting device comprising:
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a substrate having light-transmitting ability; a transistor over the substrate; a color filter over the transistor; a light-emitting element over the color filter and comprising; a first electrode having light-transmitting ability and being electrically connected to the transistor; an EL layer over the first electrode; and a second electrode over the EL layer; and a protective film over the light-emitting element, wherein the transistor is overlapped with the color filter, and wherein the transistor comprises a semiconductor layer including indium, gallium, zinc, and oxygen. - View Dependent Claims (31, 32, 33, 34, 35)
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36. A light-emitting device comprising:
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a substrate having light-transmitting ability; a transistor over the substrate; a color filter over the transistor; a light-emitting element over the color filter and comprising; a first electrode having light-transmitting ability and being electrically connected to the transistor; an EL layer over the first electrode; and a second electrode over the EL layer; and a protective film over the light-emitting element, wherein the transistor is overlapped with the color filter, and wherein the transistor comprises an oxide semiconductor layer. - View Dependent Claims (37, 38, 39, 40)
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Specification