Methods of characterizing semiconductor light-emitting devices based on product wafer characteristics

• US 8,765,493 B2
• Filed: 11/20/2012
• Issued: 07/01/2014
• Est. Priority Date: 11/20/2012
• Status: Active Grant

• Current Assignee: Ultratech Incorporated (Veeco Instruments Incorporated)
• Original Assignee: Ultratech Incorporated (Veeco Instruments Incorporated)
• Inventors: Hawryluk, Andrew M., Owen, David
• Primary Examiner(s): Malsawma, Lex
• Application Number:
  US13/681,994
• Publication Number:
  US 20140141538A1
• Time in Patent Office: 588 Days
• Field of Search: 438/7
• US Class Current: 438/7
• CPC Class Codes: G01B 11/24 for measuring contours or curvatures
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Abstract

Methods of characterizing semiconductor light-emitting devices (LEDs) based on product wafer characteristics are disclosed. The methods include measuring at least one product wafer characteristic, such curvature or device layer stress. The method also includes establishing a relationship between the at least one characteristic and the emission wavelengths of the LED dies formed from the product wafer. The relationship allows for predicting the emission wavelength of LED structures formed in the device layer of similarly formed product wafers. This in turn can be used to characterize the product wafers and in particular the LED structures formed thereon, and to perform process control in high-volume LED manufacturing.

Claims

1. A method of characterizing the emission wavelength of a semiconductor light-emitting device structure of a product wafer having a substrate, comprising:

establishing a relationship between a device-layer stress S(x,y) and the emission wavelength λ

_E(x,y) for the device structures formed on the product wafer by measuring the device-layer stress S(x,y) of a test product wafer, dicing the test product wafer to form dies, and measuring the emission wavelengths of the dies as a function of their device-layer stress and corresponding device structure locations (x,y);

measuring a change in curvature Δ

C(x,y) of the test product wafer based on curvature measurements of the substrate performed before and after substrate processing to form the device structures;

calculating the device-layer stress S(x,y) in the test product wafer based on the measured changed in curvature Δ

C; and

associating the actual emission wavelength λ

_E with the device structures based on the relationship between the device-layer stress S(x,y) and the (x,y) positions on the test product wafer to establish a predicted emission wavelength for the device structures that corresponds to the emission wavelength λ

_E.

2. The method of claim 1, further calculating the stress S(x,y) in the test product wafer based on the measured changed in curvature Δ

C via the relationship

S(x,y)={M_Sh_S²/6h_F}Δ

C(x,y)

where M_s is a biaxial modulus of the substrate, h_S is a height of the substrate, h_F is a thickness the device structures.

3. The method of claim 1, wherein the device structures have either a light-emitting diode or laser diode configuration.

4. The method of claim 1, further comprising:

establishing a desired emission wavelength;

dicing the product wafer to form dies from the device structures; and

culling the dies based on the predicted emission wavelength.

5. The method of claim 1, further comprising:

defining a tolerance on an amount of variation in the emission wavelength; and

comparing the predicted emission wavelengths to the tolerance and determining from the comparison a course of action that includes either scrapping the product wafer, reworking the product wafer, or using a select portion of the product wafer.

6. The method of claim 1, wherein the substrate processing includes performing a metalorganic chemical vapor deposition (MOCVD) process.

7. A method of characterizing an emission wavelength of a semiconductor light-emitting device (LED) structure of a product wafer having a substrate and a device layer, comprising:

a) measuring at least one characteristic of a test product wafer formed in substantially the same manner as the product wafer, wherein the at least one characteristic is selected from the group of characteristics comprising;

device layer stress and product wafer curvature;

b) dicing the at least one test product wafer to form LED dies that have associated therewith a position on the test product wafer;

c) measuring an LED emission wavelength for each the LED dies to establish a set of LED emission wavelengths that vary with position on the product wafer;

d) determining a relationship between the at least one test product wafer characteristic, the set of LED emission wavelengths, and the positions of the LED dies; and

e) using the relationship determined in act d) to predict the LED emission wavelength of the LED structures formed on the product wafer.

8. The method of claim 7, further comprising binning the LED structures of the product wafer based on the relationship determined in act d).

9. The method of claim 7, wherein the product wafer includes a substrate and further comprising measuring a curvature of the substrate prior to forming the product wafer.

10. The method of claim 9, further comprising measuring at least one of the substrate curvature and product wafer curvature using coherent gradient sensing (CGS).

11. The method of claim 9, wherein the device structures have a dimension, and including determining the at least one test product wafer characteristic to a dimension that is substantially equal to or less than the device structure dimension.

12. A method of forming semiconductor light-emitting devices (LEDs), comprising:

forming a product wafer comprising LED structures formed on a substrate by a process having one or more process variables, with the substrate having a known initial curvature C₀(x,y) prior to forming the LED structures thereon;

measuring a curvature C(x,y) of the product wafer after forming the light-emitting device structures thereon, and determining a change in curvature Δ

C(x,y)=C(x,y)−

C₀(x,y);

calculating a stress S(x,y) in the product wafer based on the measured changed in curvature Δ

C(x,y);

associating an emission wavelength λ

_E of the LED structures with the calculated stress S(x,y) based on a relationship between the calculated stress S(x,y) and (x,y) positions of the light-emitting device structures on the product wafer; and

comparing the emission wavelength λ

_E to an emission-wavelength variation tolerance and binning the LED structures into one or more bins based on the tolerance.

13. The method of claim 12, further comprising using only LED structures in one or more select bins to form LED devices.

14. The method of claim 12, further comprising adjusting at least one of the one or more process variables to reduce an amount of emission wavelength variation in the light-emitting device structures as a function of the (x,y) positions of the light-emitting device structures on the product wafer.

15. The method of claim 14, wherein the process variables are selected from the set of process variables comprising:

time, temperature, temperature uniformity, partial gas pressure, partial gas pressure uniformity, gas flow rate and gas flow uniformity.

16. The method of claim 14, further comprising:

making curvature measurements of one or more test product wafers formed in the same manner as the product wafer;

dicing the one or more test product wafers to form LED dies; and

measuring emission wavelengths of the LED dies a function of their (x,y) position on the one or more test product wafers to the measured text product wafer curvature to the emission wavelengths.

17. The method of claim 16, further comprising:

forming a new product wafer;

measuring the curvature of the new product wafer; and

determining LED emission wavelengths of LED structures on the new product wafer based on the measured curvature of the new product wafer.

18. A method of forming semiconductor light-emitting devices (LEDs), comprising:

forming a product wafer comprising LED structures formed on a semiconductor substrate by a process having one or more process variables;

measuring a curvature uniformity of the product wafer after forming the LED structures thereon; and

adjusting at least one of the one or more process variables to meet at least one of a curvature uniformity requirement and a stress uniformity requirement.

19. A method of forming a semiconductor light-emitting device (LED), comprising:

forming a product wafer comprising LED structures formed on a substrate by a process having one or more process variables, with the substrate having known initial curvature C₀(x,y) prior to forming the light-emitting device structures thereon;

measuring a curvature C(x,y) of the product wafer after forming the light-emitting device structures thereon, and determining a curvature uniformity based on C₀(x,y) and C(x,y);

determining a first number of die that fall within a first range of curvature uniformity;

determining a second number of die that fall within a second range of curvature uniformity; and

assigning a quality value for the product wafer based on the first and second numbers.

20. The method of claim 19, further comprising dispositioning the product wafer based on the assigned quality value.

21. The method of claim 19, further comprising:

dicing the product wafer to form LED dies associated with the first and second numbers; and

using the LED dies associated with the first number for a first application and using the LED dies associated with the second number for a second application.

22. A method of forming semiconductor light-emitting devices, comprising:

forming a product wafer comprising light-emitting device structures formed on a substrate by a process having one or more process variables, with the substrate having known initial curvature C₀(x,y) prior to forming the light-emitting device structures thereon;

measuring a curvature C(x,y) of the product wafer after forming the light-emitting device structures thereon, and determining a change in curvature Δ

C(x,y)=C(x,y)−

C₀(x,y);

associating an emission wavelength λ

_E of the light-emitting device structures with the calculated wafer curvature C(x,y,) based on a relationship between the calculated curvature C(x,y) and (x,y) positions of the light-emitting device structures on the product wafer; and

comparing the emission wavelength λ

_E to an emission-wavelength variation tolerance to determine which light-emitting structures can be used to form a light-emitting device.