Semiconductor device structures and the separating methods thereof
First Claim
1. A method of separating semiconductor device structures, comprising:
- providing a substrate, comprising a first surface and a second surface opposite to the first surface;
forming a plurality of semiconductor epitaxial stacks on the first surface;
forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks;
performing a physical etching process to directly sever the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer, wherein the physical etching process is a microblasting process; and
separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.
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Abstract
A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly server the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.
21 Citations
14 Claims
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1. A method of separating semiconductor device structures, comprising:
providing a substrate, comprising a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly sever the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer, wherein the physical etching process is a microblasting process; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A package type semiconductor device structure, comprising:
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a substrate comprising a first surface, a second surface opposite to the first surface, and a plurality of the first sidewalls adjacent to the first surface; a semiconductor epitaxial stack formed on the first surface, comprising; a first semiconductor material layer with a first electrical conductivity; a second semiconductor material layer with a second electrical conductivity; an active layer positioned between the first semiconductor material layer and the second semiconductor material layer; and a third surface facing the first surface and a plurality of second sidewalls adjacent to the third surface; a fourth surface opposite to the third surface and having at least an electrode thereon; and a protecting layer, covering the second surface, the first sidewalls, and the second sidewalls, and exposing a surface of the electrode. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification