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Semiconductor device structures and the separating methods thereof

  • US 8,765,504 B2
  • Filed: 06/07/2012
  • Issued: 07/01/2014
  • Est. Priority Date: 06/09/2011
  • Status: Active Grant
First Claim
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1. A method of separating semiconductor device structures, comprising:

  • providing a substrate, comprising a first surface and a second surface opposite to the first surface;

    forming a plurality of semiconductor epitaxial stacks on the first surface;

    forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks;

    performing a physical etching process to directly sever the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer, wherein the physical etching process is a microblasting process; and

    separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.

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