Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp
First Claim
1. A method for manufacturing a Group III nitride semiconductor, comprising:
- a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, whereinsaid sputtering step includes respective substeps of;
a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T1; and
a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature T2 which is lower than the temperature T1,further comprising;
a vacuum step of removing an oxygen layer attached to the surface of the substrate, by preparing a vacuum state in the chamber and heating the substrate to the temperature T1,wherein said first sputtering step and second sputtering step are performed in this order following said vacuum step.
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Abstract
A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of: a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T1; and a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature T2 which is lower than the temperature T1.
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13 Claims
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1. A method for manufacturing a Group III nitride semiconductor, comprising:
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a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of;
a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T1; and
a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature T2 which is lower than the temperature T1,further comprising;
a vacuum step of removing an oxygen layer attached to the surface of the substrate, by preparing a vacuum state in the chamber and heating the substrate to the temperature T1,wherein said first sputtering step and second sputtering step are performed in this order following said vacuum step. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification