×

Method for fabricating semiconductor device

  • US 8,765,561 B2
  • Filed: 06/06/2011
  • Issued: 07/01/2014
  • Est. Priority Date: 06/06/2011
  • Status: Active Grant
First Claim
Patent Images

1. A method for fabricating semiconductor device, comprising:

  • providing a substrate;

    forming a dummy gate on the substrate;

    forming a contact etch stop layer on the dummy gate and the substrate, wherein the contact etch stop layer comprises a tensile stress layer;

    forming an interlayer dielectric layer on the tensile stress layer;

    performing a planarizing process to partially remove the interlayer dielectric layer and the contact etch stop layer;

    partially removing the dummy gate; and

    after removing the dummy gate, performing a thermal treatment on both the contact etch stop layer and the interlayer dielectric layer.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×