×

Deposit/etch for tapered oxide

  • US 8,765,609 B2
  • Filed: 07/25/2012
  • Issued: 07/01/2014
  • Est. Priority Date: 07/25/2012
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of forming a tapered field plate dielectric region in a semiconductor wafer, the method comprising:

  • etching a trench in the semiconductor wafer, wherein the trench has a sidewall;

    depositing a first thickness of a first insulating layer on the semiconductor wafer, including the sidewall;

    etching a first amount of the first insulating layer, wherein a first upper portion of the first insulating layer adjacent to the top of the trench is removed to expose a first upper surface of the first insulating layer;

    depositing a second thickness of a second insulating layer on the semiconductor wafer, wherein the second insulating layer overlaps a portion of the first insulating layer, and wherein the second insulating layer overlaps the first upper surface; and

    etching a second amount of the second insulating layer, wherein a second upper portion of the second insulating layer on the sidewall of the trench is removed.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×