Double patterning process

• US 8,765,612 B2
• Filed: 09/14/2012
• Issued: 07/01/2014
• Est. Priority Date: 09/14/2012
• Status: Active Grant

• Current Assignee: Nanya Technology Corporation
• Original Assignee: Nanya Technology Corporation
• Inventors: Lee, Jenn-Wei, Liu, Hung-Jen
• Primary Examiner(s): Vinh, Lan
• Assistant Examiner(s): Lu, Jiong-Ping
• Application Number:
  US13/615,669
• Publication Number:
  US 20140080305A1
• Time in Patent Office: 655 Days
• US Class Current: 438/736
• CPC Class Codes: G03F 7/0035 Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
• CPC Class Codes: H01L 21/0271 comprising organic layers
• CPC Class Codes: H01L 21/0274 Photolithographic processes

Abstract

A double patterning process is described. A substrate having a first area and a second area is provided. A target layer is formed over the substrate. A patterned first photoresist layer is formed over the target layer, wherein the patterned first photoresist layer has openings and has a first thickness in the first area, and at least a portion of the patterned first photoresist layer in the second area has a second thickness less than the first thickness. A second photoresist layer is then formed covering the patterned first photoresist layer and filling in the openings.

Claims

1. A double patterning process, comprising:

providing a substrate having a first area and a second area;

forming a target layer over the substrate;

forming a patterned first photoresist layer over the target layer, wherein the patterned first photoresist layer has a plurality of first openings and has a first thickness in the first area, at least a first portion of the patterned first photoresist layer in the second area has a second thickness less than the first thickness, and the second thickness is greater than zero; and

forming a second photoresist layer covering the patterned first photoresist layer and filling in the first openings.

2. The double patterning process of claim 1, wherein the patterned first photoresist layer in the second area further comprises:

a second portion that is located adjacent to the first area, has a third thickness greater than the second thickness, and is contiguous with the first portion of the patterned first photoresist layer in the second area.

3. The double patterning process of claim 2, wherein the third thickness is substantially equal to the first thickness.

4. The double patterning process of claim 1, wherein forming the patterned first photoresist layer comprises:

forming a first photoresist layer over the substrate;

using a photomask to expose the first photoresist layer, wherein a transparency of an area of the photomask corresponding to the second area is lower than a transparency of areas of the photomask corresponding to the first openings in the first area; and

developing the first photoresist layer after the exposure.

5. The double patterning process of claim 4, wherein the photomask comprises a tri-tone photomask.

6. The double patterning process of claim 5, wherein the tri-tone photomask comprises:

a transparent substrate that has a third area corresponding to the first area of the substrate, and a fourth area corresponding to the second area of the substrate;

a first semi-transparent layer on the third area and the fourth area of the transparent substrate; and

a second semi-transparent layer at least on the first semi-transparent layer in the third area,

wherein the first semi-transparent layer and the second semi-transparent layer in the third area have a plurality of second openings that correspond to the first openings in the first area of the substrate and expose portions of the transparent substrate in the third area.

7. The double patterning process of claim 6, wherein a transparency of the transparent substrate, a transparency of the first semi-transparent layer and a transparency of the second semi-transparent layer are different from each other.

8. The double patterning process of claim 7, wherein the transparency of the transparent substrate is higher than the transparency of the first semi-transparent layer, and the transparency of the first semi-transparent layer is higher that the transparency of the second semi-transparent layer.

9. The double patterning process of claim 8, wherein the transparency of the first semi-transparent layer ranges from 20% to 60%, and the transparency of the second semi-transparent layer ranges from 30% to 70%.

10. The double patterning process of claim 6, wherein the transparent substrate comprises quartz.

11. The double patterning process of claim 6, wherein the first semi-transparent layer and the second semi-transparent layer comprise molybdenum silicon nitride (MoSi_xN_y) layers having different combinations of x and y.

12. The double patterning process of claim 1, wherein the second thickness is within a range of 30% to 70% of the first thickness.

13. The double patterning process of claim 1, wherein a sum of the second thickness of the first portion of the patterned first photoresist layer and a thickness of the second photoresist layer in the second area is within a range of 85% to 95% of a thickness of the second photoresist layer in the first area.

14. The double patterning process of claim 1, wherein a difference between a sum of the second thickness of the first portion of the patterned first photoresist layer and a thickness of the second photoresist layer in the second area and a thickness of the second photoresist layer in the first area is within a range of 50-150 angstroms.

15. The double patterning process of claim 1, further comprising:

patterning the second photoresist layer to form a plurality of patterns in the first openings; and

patterning the target layer using the patterned first photoresist layer and the patterned second photoresist layer as a mask.

16. The double patterning process of claim 1, wherein the first area comprises a memory cell area, and the second area comprises a peripheral area.