Semiconductor device

• US 8,766,253 B2
• Filed: 08/24/2011
• Issued: 07/01/2014
• Est. Priority Date: 09/10/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Miyake, Hiroyuki
• Primary Examiner(s): NGUYEN, CUONG QUANG
• Application Number:
  US13/216,423
• Publication Number:
  US 20120061677A1
• Time in Patent Office: 1,042 Days
• Field of Search: 257/43, 257 59- 72, 257/E29.273, 257/E33.053
• US Class Current: 257/43
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1251 comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs

Abstract

To provide a semiconductor device including a transistor formed using a highly reliable oxide semiconductor. To provide a semiconductor device which can be manufactured with high productivity and high yield by reducing the number of photolithography steps. The semiconductor device includes a first wiring, a second wiring, and a third wiring whose potential is lower than those of the first wiring and the second wiring between the first wiring and the second wiring. In the semiconductor device, the first wiring is electrically connected to the third wiring through a first transistor in which a gate electrode layer is electrically connected to a source electrode layer, the second wiring is electrically connected to the third wiring through a second transistor in which the gate electrode layer is electrically connected to the source electrode layer, and a continuous oxide semiconductor film used for a semiconductor region of the first transistor and the second transistor is provided above or below the first wiring, the second wiring, and the third wiring.

Claims

1. A semiconductor device comprising:

a first wiring;

a second wiring; and

a third wiring between the first wiring and the second wiring,

wherein a potential of the third wiring is lower than potentials of the first wiring and the second wiring ,

wherein the first wiring is electrically connected to the third wiring through a first transistor,

wherein the first transistor comprises a first gate electrode and a first source electrode electrically connected with each other, and a first semiconductor region,

wherein the second wiring is electrically connected to the third wiring through a second transistor,

wherein the second transistor comprises a second gate electrode and a second source electrode electrically connected with each other, and a second semiconductor region,

wherein the first and second semiconductor regions are provided above or below the first wiring, the second wiring, and the third wiring, and

wherein the first and second semiconductor regions are provided in a continuous oxide semiconductor film.

3. The semiconductor device according to claim 1, further comprising:

a third transistor electrically connected to the first wiring; and

a fourth transistor electrically connected to the second wiring.

5. The semiconductor device according to claim 3, further comprising:

a first liquid crystal element electrically connected the third transistor; and

a second liquid crystal element electrically connected the fourth transistor ,

wherein the third wiring is a capacitor wiring.

7. The semiconductor device according to claim 3, further comprising:

a first light-emitting element electrically connected to the third transistor; and

a second light-emitting element electrically connected to the fourth transistor,

wherein the third wiring is a power supply line.

9. The semiconductor device according to claim 1, wherein each of the first transistor and the second transistor comprises a stack of a gate electrode layer, a gate insulating layer, an oxide semiconductor film, a source electrode layer, and a drain electrode layer in this order.

11. The semiconductor device according to claim 1, wherein the semiconductor device is used in electronic appliance selected from the group consisting of a laptop personal computer, a portable information terminal, an e-book reader, a mobile phone, a digital video camera, and a television set.

2. A semiconductor device comprising:

a first wiring;

a second wiring;

a third wiring between the first wiring and the second wiring;

wherein a potential of the third wiring is lower than potentials of the first wiring and the second wiring;

a first transistor comprising;

a first drain electrode electrically connected to the first wiring;

a first gate electrode electrically connected to the third wiring;

a first source electrode electrically connected to the third wiring; and

a first semiconductor region provided above or below the first wiring, the second wiring and the third wiring,

a second transistor comprising;

a second drain electrode electrically connected to the second wiring;

a second gate electrode electrically connected to the third wiring;

a second source electrode electrically connected to the third wiring; and

a second semiconductor region provided above or below the first wiring, the second wiring and the third wiring,

wherein the first and second semiconductor regions are provided in a continuous oxide semiconductor film.

4. The semiconductor device according to claim 2, further comprising:

a third transistor electrically connected to the first wiring; and

a fourth transistor electrically connected to the second wiring.

6. The semiconductor device according to claim 4, further comprising:

a first liquid crystal element electrically connected the third transistor; and

a second liquid crystal element electrically connected the fourth transistor ,

wherein the third wiring is a capacitor wiring.

8. The semiconductor device according to claim 4, further comprising:

a first light-emitting element electrically connected to the third transistor; and

a second light-emitting element electrically connected to the fourth transistor,

wherein the third wiring is a power supply line.

10. The semiconductor device according to claim 2, wherein each of the first transistor and the second transistor comprises a stack of a gate electrode layer, a gate insulating layer, an oxide semiconductor film, a source electrode layer, and a drain electrode layer in this order.

12. The semiconductor device according to claim 2, wherein the semiconductor device is used in electronic appliance selected from the group consisting of a laptop personal computer, a portable information terminal, an e-book reader, a mobile phone, a digital video camera, and a television set.