Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system

• US 8,766,295 B2
• Filed: 07/08/2013
• Issued: 07/01/2014
• Est. Priority Date: 08/05/2008
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, YuSik
• Primary Examiner(s): NGO, NGAN V
• Application Number:
  US13/936,671
• Publication Number:
  US 20130292714A1
• Time in Patent Office: 358 Days
• Field of Search: 257/91, 257/95, 257/99, 257/103
• US Class Current: 257/91
• CPC Class Codes: F21W 2131/103 of streets or roads
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45139 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 25/0756 Stacked arrangements of devices
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01039 Yttrium [Y]
• CPC Class Codes: H01L 2924/207 Diameter ranges
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate

Abstract

A semiconductor device includes a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween, a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween, and a conductive layer disposed between the first semiconductor layer and the fourth semiconductor layer, the first semiconductor layer and the fourth semiconductor layer having different conductivity types.

Claims

1. A light emitting device comprising:

a first light emitting structure which includes a first semiconductor pattern of a first conductivity type, a second semiconductor pattern of a second conductive type, and a first active pattern, wherein the first light emitting structure is turned on or turned off according to a bias applied to the first semiconductor pattern and the second semiconductor pattern;

a first electrode having an inclined sidewall and a bottom, wherein an upper surface of the first electrode allows light generated from the first active pattern to escape from the first light emitting structure;

an insulating pattern formed between the first electrode and the first light emitting structure, wherein the insulating pattern includes an oxide film, a nitride film, an oxynitride film, Al₂O₃, or AlN;

an intermediate material layer formed between the first electrode and a substrate, wherein the intermediate material layer includes Au, Ag, Pt, Ni, Cu, Sn, Al, Pb, Cr or Ti; and

a barrier layer which is formed between the first electrode and the intermediate material layer, and includes at least one of a single layer, a laminate, and a combination thereof including Pt, Ni, Cu, Al, Cr, Ti or W,

wherein at least one of the first semiconductor pattern, the second semiconductor pattern, and the first active pattern includes InxAlyGa(1-x-y)N, 0≦

x≦

1, 0≦

y≦

1, and the first electrode connected to the first semiconductor pattern of the first conductive type has a bowl shape and an inclined sidewall.

2. The light emitting device of claim 1, wherein at least one of the first semiconductor pattern and the second semiconductor pattern includes n-type InxAlyGa(1-x-y)N, 0≦

x≦

1, 0≦

y≦

1.

3. The light emitting device of claim 1, wherein the substrate is an insulating substrate, which includes vias electrically connected to one of the patterns.

4. The light emitting device of claim 1, wherein the substrate is a conductive substrate including Si, strained Si, Si alloy, silicon-on-insulator (SOI), SiC, SiGe, SiGeC, Si—

Al, Ge, Ge alloy, GaAs, InAs, III-V semiconductor or II-VI semiconductor.

5. The light emitting device of claim 1, further comprising a phosphor layer to produce white light including:

a transparent resin which is one of epoxy resin, silicone resin, hardened silicone resin, denatured silicone resin, urethane resin, oxethane resin, acryl resin, polycarbonate resin and polyimide resin; and

a phosphor which is at least one selected from the group consisting of M₂Si₅N₈;

Eu, MSi₇N₁₀;

Eu, M_1.8Si₅O_0.2N₈;

Eu, M_0.9Si₇O0.1N₁₀;

Eu, MSi₂O₂N₂;

Eu, M₅(PO₄)₃X;

R, M₂B₅O₉X;

R, SrAl₂O₄;

R, Sr₄Al₁₄O₂₅;

R, CaAl₂O₄;

R, BaMg₂Al₁₆O₂₇;

R, BaMg₂Al₁₆O₁₂;

R, BaMgAl₁₀O₁₇;

R, La₂O₂S;

Eu, Y₂O₂S;

Eu, Gd₂O₂S;

Eu, YAG-based phosphors represented by Y₃Al₅O₁₂;

Ce, (Y_0.8Gd_0.2)₃Al₅O₁₂;

Ce, Y₃(Al_0.8Ga_0.2)₅O₁₂;

Ce, and (Y, Gd)₃ (Al, Ga)₅O₁₂, Tb₃Al₅O₁₂;

Ce, Lu₃Al₅O₁₂;

Ce, alkaline earth silicate phosphor, (SrBa)₂SiO₄;

Eu, ZnS;

Eu, and Zn₂GeO₄;

Mn, MGa₂S₄;

Eu, wherein M represents at least one element selected from among Sr, Ca, Ba, Mg and Zn, X represents at least one element selected from among F, Cl, Br, and I, R represents at least one element selected from among Eu and Mn, R, and portion or all of Y is substituted with Tb or Lu.

6. The light emitting device of claim 1, further comprising a phosphor layer to produce white light including:

a transparent resin which is one of epoxy resin, silicone resin, hardened silicone resin, denatured silicone resin, urethane resin, oxethane resin, acryl resin, polycarbonate resin and polyimide resin; and

a phosphor which is at least one selected from the group consisting of a nitride-based or oxynitride-based phosphor, mainly activated by lanthanides;

an alkaline earth halogen apatite phosphor, mainly activated by lanthanides or by transition metal elements;

an alkaline earth metal borate halogen phosphor;

an alkaline earth metal aluminate phosphor;

an alkaline earth sulfide phosphor;

a rare earth aluminate phosphor, mainly activated by lanthanides;

an alkaline earth silicate phosphor;

an alkaline earth thiogallate phosphor;

an alkaline earth silicon nitride phosphor;

a germanate phosphor;

a rare earth silicate phosphor; and

inorganic and organic complexes, mainly activated by lanthanides.

7. The light emitting device of claim 1, further comprising a phosphor layer to produce white light including only a phosphor without a transparent resin.

8. The light emitting device of claim 5, further comprising a lens formed of a transparent resin on the phosphor layer.

9. The light emitting device of claim 6, further comprising a lens formed of a transparent resin on the phosphor layer.

10. The light emitting device of claim 7, further comprising a lens formed of a transparent resin on the phosphor layer.

11. The light emitting device of claim 5, wherein the phosphor layer includes a red phosphor to increase a color rendering index (CRI).

12. The light emitting device of claim 6, wherein the phosphor layer includes a red phosphor to increase a color rendering index (CRI).

13. The light emitting device of claim 7, wherein the phosphor layer includes a red phosphor to increase a color rendering index (CRI).