Semiconductor light-emitting device

• US 8,766,308 B2
• Filed: 08/09/2013
• Issued: 07/01/2014
• Est. Priority Date: 05/16/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Lim, Woo Sik
• Primary Examiner(s): DIALLO, MAMADOU L
• Application Number:
  US13/963,724
• Publication Number:
  US 20130320389A1
• Time in Patent Office: 326 Days
• Field of Search: 257 9- 39, 257E29069-E29071, 257/E29.245, 257E49001-E49004
• US Class Current: 257/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer; and an insulating layer on an outer peripheral surface of at least two layers of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer.

Claims

1. A semiconductor light emitting device comprising:

a light emitting structure including a first semiconductor layer, a second semiconductor layer under the first semiconductor layer and an active layer between the first and second semiconductor layers;

a first electrode on a top surface of the first semiconductor layer;

a second electrode layer under a lower surface of the light emitting structure;

a passivation layer between the light emitting structure and the second electrode layer;

an insulating member between a lower surface of an protrusion of the first semiconductor layer and a top surface of the passivation layer; and

a conductive support member under a lower surface of the second electrode layer,

wherein the top surface of the passivation layer is contacted with a lower surface of the second semiconductor layer and a lower surface of the insulating member,

wherein the insulating member surrounds side surfaces of the active layer and the second semiconductor layer,

wherein the passivation layer includes an open area therein,

wherein the second electrode layer includes an first portion disposed in the open area of the passivation layer and a second portion disposed under the lower surface of the passivation layer,

wherein a top surface of the light emitting structure has a different width from the lower surface of the light emitting structure.

2. The light emitting device of claim 1, wherein the top surface of the light emitting structure has the width wider than that of the lower surface of the light emitting structure.

3. The light emitting device of claim 2, wherein the top surface of the first semiconductor layer has a width wider than that of a lower surface of the first semiconductor layer.

4. The light emitting device of claim 1, wherein the protrusion of the first semiconductor layer is located at a higher position than a lower surface of the first semiconductor layer and is located at an outer position than a side surface of the active layer.

5. The light emitting device of claim 1, wherein a top surface of the insulating member is located at a lower position than the protrusion of the first semiconductor layer and the insulating member is contacted with a side surface of a lower portion of the first semiconductor layer.

6. The light emitting device of claim 1, further comprising a contact layer contacted with the lower surface of the lower surface of the light emitting structure and a top surface of the second electrode layer,

wherein the contact layer has a conductive material different from the second electrode layer.

7. The light emitting device of claim 1, wherein the passivation layer has an insulating material.

8. The light emitting device of claim 1, wherein the passivation layer has the same material as that of the insulating member.

9. The light emitting device of claim 1, wherein the passivation layer has the same material as that of the insulating member.

10. The light emitting device of claim 1, wherein the passivation layer is formed of a conductive material.

11. The light emitting device of claim 1, The light emitting device of claim 1, wherein the passivation layer is formed of a transmissive material.

12. The light emitting device of claim 1, wherein the conductive support member includes a protruding portion protruded toward the first portion of the second electrode layer.

13. A semiconductor light emitting device comprising:

a light emitting structure including a first semiconductor layer, a second semiconductor layer under the first semiconductor layer and an active layer between the first and second semiconductor layers;

a first electrode on a top surface of the first semiconductor layer;

a second electrode layer under a lower surface of the light emitting structure;

a first insulating layer between the light emitting structure and the second electrode layer;

a second insulating layer between a part of side surface of the first semiconductor layer and a top surface of the first insulating layer; and

a conductive support member under a lower surface of the second electrode layer,

wherein the top surface of the first insulating layer is contacted with the lower surface of the light emitting structure and a lower surface of the second insulating layer,

wherein the second insulating layer is contacted with side surfaces of the active layer and the second semiconductor layer,

wherein the first insulating layer includes an open area therein,

wherein the second electrode layer includes an first portion disposed in the open area of the first insulating layer and a second portion disposed under the lower surface of the first insulating layer,

wherein the first insulating layer surrounds the first portion of the second electrode layer,

wherein a top surface of the light emitting structure has a wider width than that of the lower surface of the light emitting structure.

14. The light emitting device of claim 13, wherein the second insulating layer has a thickness less than that of the light emitting structure.

15. The light emitting device of claim 13, wherein the first semiconductor layer has a multi-layer structure.

16. The light emitting device of claim 13, wherein a top surface of the second insulating layer is located at a lower position than the part of the side surface of the first semiconductor layer and the second insulating layer is contacted with the part of the side surface of the first semiconductor layer.

17. The light emitting device of claim 13, wherein an outer side surface of the first semiconductor layer and an outer side surface of the second insulating layer disposed on the same plane.

18. The light emitting device of claim 13, wherein the top surface of the first insulating layer has a width wider than that of the lower surface of the second insulating layer.

19. The light emitting device of claim 13, wherein the top surface of the first semiconductor layer has a width wider than that of a lower surface of the first semiconductor layer.

20. The light emitting device of claim 13, wherein the part of the side surface of the first semiconductor layer vertically overlaps the first and second the passivation layers.