Omnidirectional reflector

• US 8,766,309 B2
• Filed: 11/07/2013
• Issued: 07/01/2014
• Est. Priority Date: 08/18/2008
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chen, Ding-Yuan, Yu, Chen-Hua, Chiou, Wen-Chih
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): TYNES JR., LAWRENCE C
• Application Number:
  US14/073,915
• Publication Number:
  US 20140054637A1
• Time in Patent Office: 236 Days
• Field of Search: 257/98, 257/603
• US Class Current: 257/98
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.

Claims

1. A device, comprising:

a substrate;

a light-reflective layer disposed over the substrate;

a photonic crystal layer disposed over the substrate, the photonic crystal layer being configured to reflect light in a plane substantially parallel with the substrate while allowing light to travel unreflected in a direction substantially perpendicular to the substrate; and

a light-emitting diode (LED) disposed over the substrate, wherein the LED includes a light-emitting layer disposed between two doped layers having different types of conductivity, and wherein the light-reflective layer and the photonic crystal layer are disposed between the substrate and the LED.

2. The device of claim 1, wherein the light-reflective layer includes a stack of layers with alternating higher and lower reflective indices.

3. The device of claim 2, wherein the light-reflective layer includes a Distributed Bragg Reflector.

4. The device of claim 1, wherein the photonic crystal layer includes a base layer and a plurality of dielectric elements disposed in the base layer, and wherein the base layer and the plurality of dielectric elements have different refractive indices.

5. The device of claim 4, wherein:

the base layer includes a gallium nitride material; and

the dielectric elements include air, silicon dioxide, titanium dioxide, and aluminum gallium nitride.

6. The device of claim 4, wherein:

the photonic crystal layer is homogeneous with respect to the direction substantially perpendicular to the substrate; and

the photonic crystal layer is non-homogeneous with respect to a first direction and a second direction that collectively define the plane substantially parallel with the substrate.

7. The device of claim 4, wherein the plurality of dielectric elements are configured as a plurality of circular columns formed in a repeating lattice pattern.

8. The device of claim 1, wherein the light-reflective layer is disposed between the substrate and the photonic crystal layer.

9. The device of claim 1, wherein the photonic crystal layer is disposed between the substrate and the light-reflective layer.

10. The device of claim 1, wherein the LED is bonded to one of the light-reflective layer and the photonic crystal layer through a single metal layer.

11. The device of claim 1, wherein the substrate is a sapphire substrate.

12. A device, comprising:

a substrate;

a light-reflective layer disposed over the substrate, wherein the light-reflective layer includes a stack of layers with alternatingly high and low refractive index values;

a photonic crystal layer disposed over the substrate, the photonic crystal layer including a base layer and a plurality of columns embedded in the base layer, wherein the columns have a repeating lattice pattern, and wherein the columns have different refractive index values than the base layer, and wherein the photonic crystal layer is homogeneous with respect to a vertical direction perpendicular to the substrate and non-homogeneous with respect to a first horizontal direction and a second horizontal direction parallel with the substrate; and

a light-emitting diode (LED) disposed over the substrate, wherein the LED includes a light-emitting layer disposed between two doped layers having different types of conductivity, and wherein the light-reflective layer and the photonic crystal layer are disposed between the substrate and the LED.

13. The device of claim 12, wherein the light-reflective layer includes a Distributed Bragg Reflector.

14. The device of claim 12, wherein:

the base layer includes a gallium nitride material; and

the dielectric elements include air, silicon dioxide, titanium dioxide, and aluminum gallium nitride.

15. The device of claim 12, wherein the light-reflective layer is disposed between the substrate and the photonic crystal layer.

16. The device of claim 12, wherein the photonic crystal layer is disposed between the substrate and the light-reflective layer.

17. The device of claim 12, wherein the LED is bonded to one of the light-reflective layer and the photonic crystal layer through a single metal layer.

18. A device, comprising:

a substrate;

a Distributed Bragg Reflector (DBR) structure disposed over the substrate;

a photonic crystal layer disposed over the substrate, the photonic crystal layer including a gallium nitride base layer and a lattice structure having a repeating pattern of columns disposed in the gallium nitride layer, wherein the columns contain air, silicon dioxide, titanium dioxide, or aluminum gallium nitride, and wherein the photonic crystal layer is homogeneous with respect to a first direction perpendicular to the substrate and non-homogeneous with respect to a second direction and a third direction that collectively define a plane parallel with an upper surface of the substrate; and

a light-emitting diode (LED) disposed over the substrate, wherein the LED includes a light-emitting layer disposed between two doped layers having different types of conductivity, and wherein the DBR structure and the photonic crystal layer are disposed between the substrate and the LED.

19. The device of claim 18, wherein the DBR structure is disposed between the substrate and the photonic crystal layer.

20. The device of claim 18, wherein the photonic crystal layer is disposed between the substrate and the DBR structure.