Semiconductor device and a method for manufacturing the same

• US 8,766,329 B2
• Filed: 06/14/2012
• Issued: 07/01/2014
• Est. Priority Date: 06/16/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Endo, Yuta, Imoto, Yuki, Takabayashi, Yuko, Yamane, Yasumasa
• Primary Examiner(s): Karimy, Timor
• Application Number:
  US13/523,262
• Publication Number:
  US 20120319175A1
• Time in Patent Office: 747 Days
• Field of Search: 257/255, 257/E21.409, 257/E29.255
• US Class Current: 257/255
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A transistor in which an electron state at an interface between an oxide semiconductor film and an underlayer film in contact with the oxide semiconductor film is favorable is provided. A value obtained by dividing a difference between nearest neighbor interatomic distance of the underlayer film within the interface and a lattice constant of the semiconductor film by the nearest neighbor interatomic distance of the underlayer film within the interface is less than or equal to 0.15. For example, an oxide semiconductor film is deposited over an underlayer film which contains stabilized zirconia which has a cubic crystal structure and has the (111) plane orientation, whereby the oxide semiconductor film including a crystal region having a high degree of crystallization can be provided directly on the underlayer film.

Claims

1. A semiconductor device comprising:

an underlayer film over a substrate, the underlayer film containing stabilized zirconia;

an oxide semiconductor film over and in contact with the underlayer film, the oxide semiconductor film including a crystal region;

a gate insulating film over the oxide semiconductor film;

a gate electrode over the gate insulating film; and

a pair of electrodes over and in contact with the oxide semiconductor film and the underlayer film,

wherein a value obtained by dividing a difference between nearest neighbor interatomic distance of the underlayer film within an interface where the underlayer film and the oxide semiconductor film are in contact with each other and a lattice constant of the oxide semiconductor film by the nearest neighbor interatomic distance of the underlayer film within the interface is less than or equal to 0.15.

2. The semiconductor device according to claim 1, wherein the stabilized zirconia has a cubic crystal structure and (111) plane orientation.

3. The semiconductor device according to claim 1, wherein the crystal region comprises a hexagonal crystal structure and a c-axis alignment.

4. The semiconductor device according to claim 3, wherein the lattice constant of the oxide semiconductor film is a-axis lattice constant.

5. The semiconductor device according to claim 1, wherein the substrate is one of a glass substrate and a semiconductor substrate.

6. A semiconductor device comprising:

an insulating layer over a substrate, the insulating layer containing stabilized zirconia;

an oxide semiconductor layer over and in contact with the insulating layer, the oxide semiconductor layer including a crystal region; and

a pair of electrodes over and in contact with the oxide semiconductor layer and the insulating layer,

wherein orientation of the insulating layer is (111) plane on an interface where the insulating layer and the oxide semiconductor layer are in contact with each other, and

wherein a value obtained by dividing a difference between nearest neighbor interatomic distance of the insulating layer within the interface and a lattice constant of the oxide semiconductor layer by the nearest neighbor interatomic distance of the insulating layer within the interface is less than or equal to 0.15.

7. The semiconductor device according to claim 6, wherein the crystal region comprises a hexagonal crystal structure and a c-axis alignment.

8. The semiconductor device according to claim 7, wherein the lattice constant of the oxide semiconductor layer is a-axis lattice constant.

9. The semiconductor device according to claim 6, wherein the substrate is one of a glass substrate and a semiconductor substrate.

10. The semiconductor device according to claim 6, wherein the stabilized zirconia has a cubic crystal structure.

11. A semiconductor device comprising:

an insulating layer over a substrate, the insulating layer containing stabilized zirconia;

an oxide semiconductor layer over and in contact with the insulating layer, the oxide semiconductor layer including a crystal region; and

a pair of electrodes over and in contact with the oxide semiconductor layer and the insulating layer,

wherein a value obtained by dividing a difference between nearest neighbor interatomic distance of the insulating layer within an interface where the insulating layer and the oxide semiconductor layer are in contact with each other and a lattice constant of the oxide semiconductor layer by the nearest neighbor interatomic distance of the insulating layer within the interface is less than or equal to 0.15.

12. The semiconductor device according to claim 11, wherein the stabilized zirconia has a cubic crystal structure and (111) plane orientation.

13. The semiconductor device according to claim 11, wherein the crystal region comprises a hexagonal crystal structure and a c-axis alignment.

14. The semiconductor device according to claim 13, wherein the lattice constant of the oxide semiconductor layer is a-axis lattice constant.

15. The semiconductor device according to claim 11, wherein the substrate is one of a glass substrate and a semiconductor substrate.