Semiconductor device and manufacturing method thereof
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate comprising a top surface and a bottom surface;
a supporter, a first surface of which is attached to the top surface of the semiconductor substrate so that an edge portion of the semiconductor substrate recedes from a corresponding edge portion of the supporter;
a connecting electrode disposed on the first surface of the supporter;
a protection layer covering a side surface of the semiconductor substrate and having an opening at the connecting electrode; and
a passivation film covering a portion of the connecting electrode so that the covering portion of the passivation film is disposed between the supporter and the connecting electrode,wherein no wiring layer is formed on the bottom surface of the semiconductor substrate, andthe passivation film comprises an insulating material and is disposed between the semiconductor substrate and the supporter.
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Accused Products
Abstract
A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.
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Citations
11 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate comprising a top surface and a bottom surface; a supporter, a first surface of which is attached to the top surface of the semiconductor substrate so that an edge portion of the semiconductor substrate recedes from a corresponding edge portion of the supporter; a connecting electrode disposed on the first surface of the supporter; a protection layer covering a side surface of the semiconductor substrate and having an opening at the connecting electrode; and a passivation film covering a portion of the connecting electrode so that the covering portion of the passivation film is disposed between the supporter and the connecting electrode, wherein no wiring layer is formed on the bottom surface of the semiconductor substrate, and the passivation film comprises an insulating material and is disposed between the semiconductor substrate and the supporter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 10, 11)
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9. A stacked semiconductor device comprising:
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a first semiconductor device; and a second semiconductor device stacked on the first semiconductor device, wherein each of the semiconductor devices comprises; a semiconductor substrate comprising a top surface and a bottom surface, a supporter, a first surface of which is attached to the top surface of the semiconductor substrate so that an edge portion of the semiconductor substrate recedes from a corresponding edge portion of the supporter, a connecting electrode disposed on the first surface of the supporter, and a protection layer covering a side surface of the semiconductor substrate and having an opening at the connecting electrode, and a passivation film covering a portion of the connecting electrode so that the covering portion of the passivation film is disposed between the supporter and the connecting electrode, the passivation film comprising an insulating material and being disposed between the semiconductor substrate and the supporter, wherein no wiring layer is formed on the bottom surface of the semiconductor substrate and the supporter has a through-hole penetrating through the supporter, and the connecting electrode of the first semiconductor device is connected electrically with the connecting electrode of the second semiconductor device.
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Specification