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Semiconductor device and manufacturing method thereof

  • US 8,766,408 B2
  • Filed: 03/07/2007
  • Issued: 07/01/2014
  • Est. Priority Date: 03/07/2006
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate comprising a top surface and a bottom surface;

    a supporter, a first surface of which is attached to the top surface of the semiconductor substrate so that an edge portion of the semiconductor substrate recedes from a corresponding edge portion of the supporter;

    a connecting electrode disposed on the first surface of the supporter;

    a protection layer covering a side surface of the semiconductor substrate and having an opening at the connecting electrode; and

    a passivation film covering a portion of the connecting electrode so that the covering portion of the passivation film is disposed between the supporter and the connecting electrode,wherein no wiring layer is formed on the bottom surface of the semiconductor substrate, andthe passivation film comprises an insulating material and is disposed between the semiconductor substrate and the supporter.

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