Sensing circuit, display device and electronic apparatus
First Claim
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1. A sensing circuit, comprising:
- a first substrate;
a second substrate facing the first substrate;
a layer of dielectric material held between the first substrate and the second substrate;
a pixel including a first electrode and a second electrode, the first electrode being disposed between the dielectric material and the first substrate, the second electrode being disposed between the dielectric material and the first substrate,wherein the first electrode is a common electrode of a pixel circuit and the second electrode is a pixel electrode of the pixel circuit;
a first sensing electrode, wherein the first sensing electrode and the common electrode of the pixel circuit are formed in a same first layer;
a second sensing electrode, wherein the second sensing electrode and the pixel electrode of the pixel circuit are formed in a same second layer; and
an electrostatic capacitance detection unit configured to produce a detection signal having an amplitude based on a capacitance formed between the first sensing electrode and the second sensing electrode through the dielectric material.
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Abstract
A sensing circuit having a first substrate, a second substrate, a layer of dielectric material, a first electrode, a second electrode and an electrostatic capacitance detection unit is provided. The second substrate faces the first substrate. The dielectric material is held between the first substrate and the second substrate. The first electrode and the second electrode are arranged between the dielectric material and the first substrate. The electrostatic capacitance detection unit is configured to produce a detection signal having an amplitude according to a value of capacitance formed between the first electrode and the second electrode through the dielectric material.
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Citations
20 Claims
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1. A sensing circuit, comprising:
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a first substrate; a second substrate facing the first substrate; a layer of dielectric material held between the first substrate and the second substrate; a pixel including a first electrode and a second electrode, the first electrode being disposed between the dielectric material and the first substrate, the second electrode being disposed between the dielectric material and the first substrate, wherein the first electrode is a common electrode of a pixel circuit and the second electrode is a pixel electrode of the pixel circuit; a first sensing electrode, wherein the first sensing electrode and the common electrode of the pixel circuit are formed in a same first layer; a second sensing electrode, wherein the second sensing electrode and the pixel electrode of the pixel circuit are formed in a same second layer; and an electrostatic capacitance detection unit configured to produce a detection signal having an amplitude based on a capacitance formed between the first sensing electrode and the second sensing electrode through the dielectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A sensing circuit, comprising:
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a first substrate; a second substrate; a layer of dielectric material between the first substrate and the second substrate; a pixel including a first electrode and a second electrode, the first electrode being disposed between the dielectric material and the first substrate, the second electrode being disposed between the dielectric material and the first substrate, wherein the first electrode is a common electrode of a pixel circuit and the second electrode is a pixel electrode of the pixel circuit; a first sensing electrode, wherein the first sensing electrode and the common electrode of the pixel circuit are formed in a same first layer and a second sensing electrode, wherein the second sensing electrode and the pixel electrode of the pixel circuit are formed in a same second layer, and wherein a distance between the first sensing electrode and the second sensing electrode is kept constant such that a capacitance formed between the first sensing electrode and the second sensing electrode through the dielectric material corresponds to a target value that maximizes a detection sensitivity of the circuit. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A sensing circuit, comprising:
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a first substrate; a second substrate facing the first substrate; a layer of dielectric material held between the first substrate and the second substrate; a first electrode disposed between the dielectric material and the first substrate; a second electrode disposed between the dielectric material and the first substrate, wherein the first electrode is a common electrode of a pixel circuit and the second electrode is a pixel electrode of the pixel circuit; a first sensing electrode, wherein the first sensing electrode and the common electrode of the pixel circuit are formed in a same first layer; a second sensing electrode, wherein the second sensing electrode and the pixel electrode of the pixel circuit are formed in a same second layer; and an electrostatic capacitance detection unit configured to produce a detection signal having an amplitude based upon a capacitance formed between the first sensing electrode and the second sensing electrode through the dielectric material.
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20. A sensing circuit, comprising:
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a first substrate; a second substrate facing the first substrate; a layer of dielectric material held between the first substrate and the second substrate; a first electrode disposed between the dielectric material and the first substrate; a second electrode disposed between the dielectric material and the first substrate, wherein the first electrode is a common electrode of a pixel circuit and the second electrode is a pixel electrode of the pixel circuit; a first sensing electrode, wherein the first sensing electrode and the common electrode of the pixel circuit are formed in a same first layer; a second sensing electrode, wherein the second sensing electrode and the pixel electrode of the pixel circuit are formed in a same second layer; and an electrostatic capacitance detection unit configured to produce a detection signal having an amplitude based on a capacitance formed between the first sensing electrode and the second sensing electrode through the dielectric material.
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Specification