Multi-bit memory with selectable magnetic layer
First Claim
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1. An apparatus comprising:
- a first storage layer disposed between first and second selection layers each with low coercivity;
a second storage layer attached to the first selection layer, opposite the first storage layer; and
a third storage layer attached to the second selection layer, opposite the first storage layer, each storage layer configured with high coercivity, where magnetic saturation of both the first and second selection layers allows programming of a logical state to the third storage layer.
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Abstract
An apparatus and associated method for a multi-bit memory capable of being selected with a magnetic layer. Various embodiments of the present invention are generally directed to a first selection layer with a low coercivity that is disposed between first and second storage layers that each have a high coercivity. In response to magnetic saturation of the first selection layer, programming of a logical state to the second storage layer is allowed.
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Citations
20 Claims
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1. An apparatus comprising:
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a first storage layer disposed between first and second selection layers each with low coercivity; a second storage layer attached to the first selection layer, opposite the first storage layer; and a third storage layer attached to the second selection layer, opposite the first storage layer, each storage layer configured with high coercivity, where magnetic saturation of both the first and second selection layers allows programming of a logical state to the third storage layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 19, 20)
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12. A method comprising:
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providing first, second, and third storage layers each configured with high coercivity and respectively separated by first and second selection layers each configured with a low coercivity; and programming a logical state to the third storage layer in response to magnetic saturation of both the first and second selection layers. - View Dependent Claims (13, 14, 15)
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16. An apparatus comprising:
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first and second selection layers each with low coercivity respectively separating first, second, and third storage layers each with a high coercivity, the first storage layer being proximal to a program source; and first and second selection sources that respectively magnetically saturate the first and second selection layers with magnetic fields, a saturation of the first and second selection layers allowing a program field from the program source to concurrently program a first logical state to the first, second, and third storage layers. - View Dependent Claims (17, 18)
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Specification